SGS Thomson Microelectronics 74V2G86STR, 74V2G86CTR Datasheet

1/7June 2003
HIGH SPEED: t
PD
= 4.8ns (TYP.) at VCC=5V
LOW POWER DISSIPATION:
CC
=1µA(MAX.) atTA=25°C
HIGH NOISE IMMUNITY:
V
NIH=VNIL
= 28% VCC(MIN.)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)atVCC=4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOLTAGE RANG E:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G86 is an advanced high-speed CMOS DUAL 2-INPUT EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology.
Power down protection is provided on all inputs and 0 to 7V can be ac c ept ed on inputs with no regard to the supply voltage. This device can be usedto interface 5V to 3V.
74V2G86
DUAL 2-INPUT EXCLUSIVE OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G86STR
SOT23-8L
74V2G86
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
RECOMMENDED OPERATING CONDITIONS
1) VINfrom30% to 70% of V
CC
PIN No SYMBOL NAME AND FUNCTION
1, 5 1A, 2A Data Input 2, 6 1B, 2B Data Input 7, 3 1Y, 2Y Data Output
4 GND Ground (0V) 8
V
CC
Positive Supply Voltage
ABY
LLL
LHH HLH HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=3.3±0.3V)
(V
CC
= 5.0 ± 0.5V)
0 to 100
0to20
ns/V ns/V
74V2G86
3/7
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
2.0 1.5 1.5 1.5 V
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input Voltage
2.0 0.5 0.5 0.5 V
3.0to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output Voltage
2.0
IO=-50 µA
1.9 2.0 1.9 1.9
V
3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
4.5
I
O
=-50 µA
4.4 4.5 4.4 4.4
3.0
I
O
=-4 mA
2.58 2.48 2.4
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output Voltage
2.0
IO=50 µA
0.0 0.1 0.1 0.1
V
3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage Current
0to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply Current
5.5
V
I=VCC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLHtPHL
Propagation Delay Time
3.3
(*)
15 6.6 9.5 1.0 11.0 1.0 12.5
ns
3.3
(*)
50 7.3 10.5 1.0 12.0 1.0 13.5
5.0
(**)
15 4.8 6.8 1.0 8.0 1.0 9.0
5.0
(**)
50 5.3 7.5 1.0 9.0 1.0 10.0
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation Capacitance (note 1)
12 pF
Loading...
+ 4 hidden pages