SGS Thomson Microelectronics 74V2G66 Datasheet



■ HIGHSPEED:

=0.3ns(TYP.)atVCC=5V

t

PD

t

=0.4ns(TYP.)atVCC=3.3V

PD

■

LOW POWER DISSIPATION:
I

=1 µA (MAX.)at TA=25oC

CC

■ LOW”ON”RESISTANCE:

=10Ω(TYP.)AT VCC=5.0VI

R

ON

R

=12Ω(TYP.)AT VCC=3.3VI

ON

■ SINE WAVE DISTORTION

0.04%(TYP.)AT V

■ WIDEOPERATINGVOLTAGERANGE:

(OPR)= 2Vto 5V

V

CC

=3.3Vf=1KHz

CC

=100µA

I/O

=100µA

I/O

DESCRIPTION

The 74V2G66 is an high-speed CMOS DUAL
BILATERAL SWITCH fabricated in silicon gate
C2MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This feature makes this part
ideal for battery-powered equipment. This
bilateral switch handles rail to rail analog and
digital signals that may vary across the full

74V2G66

DUAL BILATERAL SWITCH

PRELIMINARY DATA

SOT23-8L

ORDER CODES

PACKAGE TUBE T & R

SOT23-8L 74V2G66STR

power-supplyrange(from Vccto Ground).
The C input is provided to control the switch and

it’s compatible with standard CMOS output; the
switchis ONwhenthe C input is heldhigh and off
when C is held low. It can be used in many
application as Battery Powered System, Audio
Signal Routing, Communications System, Test
Equipment. It’s available in the commercial
temperaturerange in SOT23-8L.

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 2000

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74V2G66

LOGICDIAGRAM

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTIO N

1, 5 1 to 2 I/O Independent Input/Output
2, 6 1 to 2 O/I Independent Output/Input
3, 7 1C to 2C Enable Input (Active

HIGH)
4 GND Ground (0V)
8V

CC

Positive Supply Voltage

TRUTH TABLE

CONT ROL SW I TCH F UNC T I ON

HON

L OFF

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

V

I
I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur. Functionaloperationunderthesecondition isnot implied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Control Input Voltage -0.5 to 7 V

IC

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current

IK

DC Control Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 100 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

20 mA

±

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

V

T

dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V

1) TruthTable guaranteed: 1.2V to 5.5V

2)V

from30%to70%V

IN

2/8

Supply Voltage (note 1) 2 to 5.5 V

CC

Input Voltage 0 to V

I

Control Input Voltage 0 to 5.5 V

IC

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

CC

CC

CC

V

V

o

C

74V2G66

DC SPECIFICATIONS

Symb o l Parameter Test C o n di ti o ns Val u e Uni t

T

=25oC - 40 t o 85oC

A

CC

0.3V

0.7V

CC

14 26 30
12 17 20

12 18 24
10 14 18

2

0.1

±

±0.1 ±1.0 µA

CC

0.3V

±

CC

1.0

µA

µ

High Level Control Input

V

IH

Voltage

V

Low Level Control Input

IL

Voltage

R

∆R

ON Resistance 3.3

ON

Difference of ON

ON

Resistance Between
Switches

Input/Output Leakage

I

OFF

Current (SWITCH OFF)

I

Switch Input Leakage

IZ

Current (SWITCH ON,
OUTPUT OPEN)

Control Input Leakage

I

IN

Current
Quiescent Supply Current 5.5 VIC=VCCor GND 1 10

I

CC

(*) Voltagerangeis 5V ±0.5V
(**) Voltagerangeis3.3V± 0.3V

V

CC

(V)

Min. Typ. Max. Min. Max.

2.0 1.5 1.5

2.7 to

0.7V

5.5

2.0 0.5 0.5

2.7 to

5.5

(**)

(*)

5.0

(**)

3.3

(*)

5.0

3.0

to 5.5

VIC=V

V

I/O=VCC

I

I/O

VIC=V

V

I/O=VCC

I

I/O

V

V

I/O=VCC

I

I/O

to GND

1mA

≤

or GND

1mA

≤

IC=VIH

to GND

1mA

≤

IH

IH

5.5 VOS=VCCto GND
V

IC=VIL

to GND

V

IS=VCC

5.5 VOS=VCCto GND

V

IC=VIH

0to

VIC= 5.5V or GND ±0.1 ±1.0 µA

5.5

V

V

Ω

Ω

A

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