SGS Thomson Microelectronics 74V2G384STR, 74V2G384CTR Datasheet
1/7June 2003
■ HIGH SPEED: t
PD
= 0.5ns (TYP.) at VCC=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) atTA=25°C
■ LOW "ON" RESISTANCE at V
CC
=5.0V:
R
ON
=7Ω(TYP), VIN=0V, I
I/O
=30mA
R
ON
=20Ω(TYP), VIN=2.4V, I
I/O
=10mA
■ OPERATING VOLATGE RANGE:
V
CC
(OPR.) = 3.0V TO 5.5V
■ 5V TOLERANT ON CONTROL PIN
■ HIGH NOISE IMMUNITY:
V
NIH=VNIL
= 28% VCC(MIN.)
DESCRIPTION
The 74V2G384 is anadvanced high-speed CMOS
DUAL HIGH SPEED BUS SWITCH fabricated i n
silicon gate C
2
MOS technology. It’s designed to
operate f rom 3V to 5.5V, making this device ideal
for portable applications. It’s offers 7Ω Resistance
typical value at V
CC
=4.5V. Additional key feature
are fast switching speed (t
ON
=3.8ns, t
OFF
=3.3ns
Typical) and Low Power Consumption.
TheOE
input is provided to control the s w itch; the
switch is ON when the OE
input is held low and
OFF when OE
is held high.
It’s available in the commercial and extended
temperature range in SOT23-8L packag e.
74V2G384
DUAL HIGH SPEED BUS SWITCH
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G384STR
SOT23-8L
74V2G384
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
* High Impedance State
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) VINfrom30% to70% ofVCCon control pin
PIN No SYMBOL NAME AND FUNCTION
1, 5 1I/O, 2I/O Independent Input/Output
2, 6 1O/I, 2O/I Independent Output/Input
7, 3 1OE
, 2OE
Enable Input (Active
HIGH)
4 GND Ground (0V)
8
V
CC
Positive Supply Voltage
OE
SWITCH FUNCTION
LON
H OFF *
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage -0.5 to VCC+ 0.5
V
V
IC
DC Control Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
IK
DC Control Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 50 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
3 to 5.5 V
V
I
Input Voltage 0 to V
CC
V
V
IC
Control Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) V
CC
= 5.0V
0 to 20 ns/V
74V2G384
3/7
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L
= 50pF, Input tr=tf=3ns)
(*) Voltage rangeis 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V
3.0to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
R
ON
ON Resistance 3.0 VIC=V
IL
V
I/O
=GND
I
I/O
≤ 30 mA
91320Ω
4.5 V
IC=VIL
V
I/O
=GND
I
I/O
≤ 30 mA
71015Ω
R
ON
ON Resistance 3.0 VIC=V
IL
V
I/O
= 1.5V
I
I/O
≤ 10 mA
32 60 80 Ω
4.5 V
IC=VIL
V
I/O
= 2.4V
I
I/O
≤ 10 mA
20 40 60 Ω
I
OFF
Input/Output
Leakage Current
(SWITCH OFF)
5.5
V
OS=VCC
to GND
V
IS=VCC
to GND
V
IC=VIH
±0.1 ± 1 ± 10 µA
I
IN
Control Input
Leakage Current
0to
5.5
V
IC
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I=VCC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PD
Delay Time
3.3
(*)
tr=tf=6ns
0.8 1.2 1.5 2.0
ns
5.0
(**)
tr=tf=6ns
0.5 0.8 1.0 1.5
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
R1= 500Ω
VIN=1.5V
8.5 12.0 14.0 16.0 ns
5.0
(**)
R1= 500 Ω
VIN=2.4V
3.8 6.5 9.0 10.0
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
R1=1KΩ
VIN=1.5V
7.3 12.0 14.0 16.0
ns
5.0
(**)
R1=1KΩ
VIN=2.4V
3.3 5.0 7.5 8.5
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