SGS Thomson Microelectronics 74V2G32STR, 74V2G32CTR Datasheet

1/8June 2003

■ HIGH SPEED: t

PD

= 3.0ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

= 28% VCC(MIN.)

■ POWER DOWN PROTECTION ON INPUTS

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

II

OH

|=IOL=4mA(MIN)atVCC=3.0V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G32 is an advanced high-speed CMOS
DUAL 2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit is composed of 3 st ages
including buffer output, w hich provide high noise
immunity and stable output.

Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to th e s upply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst st atic discharge, giving
them ESD immunity and transient excess voltage.

74V2G32

DUAL 2-INPUT OR GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G08STR

SOT23-8L

74V2G32

2/8

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) VCC=0V

2) High or Low State

RECOMMENDED OPERATING CONDITIONS

1) VCC=0V

2) High or Low State

3) V

IN

from30%to70% ofV

CC

PIN No SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

nA nB nY

LLL

LHH
HLH
HHH

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage (see note 1)

-0.5 to +7.0 V

V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

− 20 mA

I

OK

DC Output Diode Current

− 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage (see note 1) 0 to 5.5

V

V

O

Output Voltage (see note 2) 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 3) (V

CC

=3.3±0.3V)

(V

CC

= 5.0 ± 0.5V)

0 to 100

0to20

ns/V
ns/V

74V2G32

3/8

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage rangeis3.3V± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

2.0 1.5 1.5 1.5
V

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

V

IL

Low Level Input
Voltage

2.0 0.5 0.5 0.5
V

3.0to

5.5

0.3V

CC

0.3V

CC

0.3V

CC

V

OH

High Level Output
Voltage

2.0

IO=-50 µA

1.9 2.0 1.9 1.9

V

3.0

I

O

=-50 µA

2.9 3.0 2.9 2.9

4.5

I

O

=-50 µA

4.4 4.5 4.4 4.4

3.0

I

O

=-4 mA

2.58 2.48 2.4

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output
Voltage

2.0

IO=50 µA

0.0 0.1 0.1 0.1

V

3.0

I

O

=50 µA

0.0 0.1 0.1 0.1

4.5

I

O

=50 µA

0.0 0.1 0.1 0.1

3.0

I

O

=4 mA

0.36 0.44 0.55

4.5

I

O

=8 mA

0.36 0.44 0.55

I

I

Input Leakage
Current

0to

5.5

VI= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

I

OPD

Power down Output
Leakage Current

0

V

O

= 5.5

0.5 5 10 µA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLHtPHL

Propagation Delay
Time

3.3

(*)

15 3.7 7.0 1.0 8.0 1.0 9.0

ns

3.3

(*)

50 5.3 8.0 1.0 9.5 1.0 10.5

5.0

(**)

15 3.0 5.0 1.0 6.0 1.0 7.0

5.0

(**)

50 4.1 6.5 1.0 7.5 1.0 8.5

74V2G32

4/8

CAPACITANCE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

/2

DYNAMIC SWITCHING CHARACTERISTICS

1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

410 10 10pF

C

PD

Power Dissipation
Capacitance
(note 1)

12 pF

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

=25°C

Min. Max.

V

OLP

Dynamic Low Level Quiet Out­put (note 1)

5.0

C

L

=50pF

V

IL

=0V,VIH= 3.3V

0.8
V

V

OLV

-0.8

74V2G32

5/8

TEST CIRCUIT

CL= 15/50pF or equivalent (includes jig and probe capacitance)
R

T=ZOUT

of pulse generator (typically 50Ω)

WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)

74V2G32

6/8

DIM.

mm. mils

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

SOT23-8L MECHANICAL DATA

74V2G32

7/8

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

Tape & Reel SOT23-xL MECHANICAL DATA

74V2G32

8/8

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