SGS Thomson Microelectronics 74V2G14STR, 74V2G14CTR Datasheet
1/8June 2003
■ HIGH SPEED: t
PD
= 3.0ns (TYP.) at VCC=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) atTA=25°C
■ TYPICAL HYSTERESIS:
V
H
= 800mV at VCC=4.5V
V
H
= 500mV at VCC=3.0V
■ POWER DOWN PROT ECTION ON INPUTS
AND OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)atVCC=4.5V
II
OH
|=IOL=4mA(MIN)atVCC=3.0V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANG E:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G14 is an advanced high-speed CMOS
TRIPLE SCHMITT TRIGGER INVERTER
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs a nd 0 to 7V can be accepted on
inputs with no regard to th e supply voltage.
Pin configuration and f unction are the same as
those of t he 74V 2G04, but 74V2G14 has
hysteresis on i nputs.
This device can be used to interface 5V to 3V
systems and it is idea l for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst static discharge, giving
them ESD immunity and transient excess voltage.
74V2G14
TRIPLE SCHMITT INVERTER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G14STR
SOT23-8L
74V2G14
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) Vcc=0V
2) Highor Low State
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME QND FUNCTION
1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs
4 GND Ground (0V)
8
V
CC
Positive Supply Voltage
nA nY
LH
HL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0 V
V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
− 20 mA
I
OK
DC Output Diode Current
− 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to 5.5
V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
74V2G14
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
P
High Level Input
Voltage
3.0 2.20 2.20 2.20
V
4.5 3.15 3.15 3.15
5.5 3.85 3.85 3.85
V
N
Low Level Input
Voltage
3.0 0.90 0.90 0.90
V
4.5 1.35 1.35 1.35
5.5 1.65 1.65 1.65
V
H
Hysteresis Voltage 3.0 0.30 1.20 0.30 1.20 0.30 1.20
V
4.5 0.40 1.40 0.40 1.40 0.40 1.40
5.5 0.50
1.60
0.50
1.60
0.50
1.60
V
OH
High Level Ouput
Voltage
2.0
IO=-50 µA
1.9 2.0 1.9 1.9
V
3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
4.5
I
O
=-50 µA
4.4 4.5 4.4 4.4
3.0
I
O
=-4 mA
2.58 2.48 2.4
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output
Voltage
2.0
IO=50 µA
0.0 0.1 0.1 0.1
V
3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
0to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
5.5
V
I=VCC
or GND
11020µA
I
OPD
Power downOutput
Leakage Current
0
V
O
= 5.5
0.5 5 10 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLHtPHL
Propagation Delay
Time
3.3
(*)
15 3.7 7.0 1.0 8.0 1.0 9.0
ns
3.3
(*)
50 5.3 8.0 1.0 9.5 1.0 10.5
5.0
(**)
15 3.0 5.0 1.0 6.0 1.0 7.0
5.0
(**)
50 4.1 6.5 1.0 7.5 1.0 8.5
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