SGS Thomson Microelectronics 74V2G132STR, 74V2G132CTR Datasheet

74V2G132

DUAL 2-INPUT SHMITT TRIGGER NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ TYPICAL HYSTERESIS:

V

= 800mV at VCC=4.5V

H

V

= 500mV at VCC=3.0V

H

■ POWER DOWN PROT ECTION ON INPUTS

= 3.0ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

II

|=IOL=4mA(MIN)atVCC=3.0V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G132 is anadvanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G132STR

Pin configuration and function are the same as those of the 74V 2G00 but the 74V2G132 has hysteresis. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs wit h no regard to the supply voltage. This device can be usedto interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2003

74V2G132

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input 2, 6 1B, 2B Data Input 7, 3 1Y, 2Y Data Output

4 GND Ground (0V) 8

TRUTH TABLE

ABY

LLH

LHH HLH HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V V V

I

OK

I

or I

I

CC

T

Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition is not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

− 20 mA

− 20 mA ± 25 mA ± 50 mA

-65 to +150 °C 260 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V V V T

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to 5.5

O

Output Voltage 0 to V

O

Operating Temperature

op

2 to 5.5 V 0 to 5.5 V

CC

-55 to 125 °C

V V

DC SPECIFICATION

Symbol Parameter

V

High Level Input

P

Voltage

V

Low Level Input

N

Voltage

V

Hysteresis Voltage 3.0 0.30 0.5 1.20 0.30 1.20 0.30 1.20

H

V

I

OPD

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

Current Quiescent Supply

CC

Current Power down Output

Leakage Current

74V2G132

Test Condition Value

= 25°C

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

3.0 2.20 2.20 2.20

4.5 3.15 3.15 3.15

5.5 3.85 3.85 3.85

3.0 0.90 0.90 0.90

4.5 1.35 1.35 1.35

5.5 1.65 1.65 1.65

4.5 0.40 0.8 1.40 0.40 1.40 0.40 1.40

5.5 0.50 1.0

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

0

IO=-50 µA

=-50 µA

I

O

I

=-50 µA

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

V

= 5.5V or GND

I

V

O

or GND

= 5.5

V

I=VCC

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

-40 to 85°C -55 to 125°C

1.60

0.50

1.60

0.50

1.60

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

0.5 5 10 µA

Unit

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t

PLHtPHL

(*) Voltage rangeis 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V

Propagation Delay Time

V

3.3

5.0

C

CC

(V)

L

(pF)

(*)

15 5.5 7.9 1.0 9.5 1.0 9.5

(*)

50 8.0 11.4 1.0 13.0 1.0 13.0

(**)

15 3.7 5.5 1.0 6.5 1.0 6.5

(**)

50 5.2 7.5 1.0 8.5 1.0 8.5

=3ns)

r=tf

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

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