SGS Thomson Microelectronics 74V2G126STR, 74V2G126CTR Datasheet

74V2G126

DUAL BUS BUFFER (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUTS

= 28% VCC(MIN.)

= 3.8ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G126 is anadvanced high-speed CMOS DUAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer me tal wiring C

2

MOS technology. 3-STATE control input nG has to be set LOW to place the out put into the high impedance sta te. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G126STR

inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems and it is ideal for portable ap plicat ions like personal digital assistant, camcorder and all battery-powered equipment. All inputs and outputs are equipped with protection circuits aga inst st atic discharge, giving them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9June 2003

74V2G126

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G, 2G Output Enable Inputs 2, 5 1A, 2A Data Inputs 3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V) 8

TRUTH TABLE

AGY

XLZ

LHL

HHH

X: "H" or "L" Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V V V

I

IK

I

OK

I

or I

I

CC

T

stg

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

1) V

=0V or nG=VCC(Output in High Impedance state)

CC

2) High or LowState

Supply Voltage DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current DC Output Diode Current DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

− 20 mA

− 20 mA ± 25 mA ± 50 mA

-65 to +150 °C 260 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC

V V V T

dt/dv

1) VCC=0V or nG=VCC(Output in High Impedance state)

2) High or LowState

3) V

from30% to70% ofV

IN

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Supply Voltage Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

(V

CC

=3.3±0.3V)

= 5.0 ± 0.5V)

Input Rise and Fall Time (note 3) (V

CC

2 to 5.5 V 0 to 5.5 V 0 to 5.5 V

CC

-55 to 125 °C 0 to 100

0to20

V

ns/V ns/V

DC SPECIFICATION

Symbol Parameter

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

High Impedance

I

OZ

Output Leakage Current

Input Leakage

I

Current Power down Output

OPD

Leakage Current Quiescent Supply

I

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5

0to

5.5 0

5.5

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

I=VIH

or V

IL

V

VO= 5.5 or GND

VI= 5.5V or GND

= 5.5

V

O

V

I=VCC

or GND

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.36 0.44 0.55

±0.25 ± 2.5 ± 5 µA

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

11020µA

74V2G126

Unit

V

CC

V

0.3V

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