SGS Thomson Microelectronics 74V2G125CTR Datasheet

1/9June 2003

■ HIGH SPEED: t

PD

= 3.8ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

= 28% VCC(MIN.)

■ POWER DOWN PROTECTION ON INPUTS

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G125 is anadvanced high-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer me tal wiring C

2

MOS

technology.
3-STATE cont rol input nG

has to be set HIGH to

place the out put into the high impedance sta te.

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to th e s upply voltage.
This device can be used to interface 5V to 3V
systems and i t is ideal for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits aga inst st atic discharge, giving
them ESD immunity and transient excess voltage.

74V2G125

DUAL BUS BUFFER (3-STATE)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G125STR

SOT23-8L

74V2G125

2/9

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

X: "H" or "L"
Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) V

CC

=0V or nG=VCC(Output in High Impedance state)

2) High or LowState

RECOMMENDED OPERATING CONDITIONS

1) VCC=0V or nG=VCC(Output in High Impedance state)

2) High or LowState

3) V

IN

from30% to70% ofV

CC

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G

,2G Output Enable Inputs
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

V

CC

Positive Supply Voltage

AG

Y

XHZ

LLL

HLH

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage (see note 1)

-0.5 to +7.0 V

V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

− 20 mA

I

OK

DC Output Diode Current

− 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage (see note 1)

0 to 5.5 V

V

O

Output Voltage (see note 2) 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 3) (V

CC

=3.3±0.3V)

(V

CC

= 5.0 ± 0.5V)

0 to 100

0to20

ns/V
ns/V

74V2G125

3/9

DC SPECIFICATION

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

2.0 1.5 1.5 1.5
V

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

V

IL

Low Level Input
Voltage

2.0 0.5 0.5 0.5
V

3.0to

5.5

0.3V

CC

0.3V

CC

0.3V

CC

V

OH

High Level Output
Voltage

2.0

IO=-50 µA

1.9 2.0 1.9 1.9

V

3.0

I

O

=-50 µA

2.9 3.0 2.9 2.9

4.5

I

O

=-50 µA

4.4 4.5 4.4 4.4

3.0

I

O

=-4 mA

2.58 2.48 2.4

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output
Voltage

2.0

IO=50 µA

0.0 0.1 0.1 0.1

V

3.0

I

O

=50 µA

0.0 0.1 0.1 0.1

4.5

I

O

=50 µA

0.0 0.1 0.1 0.1

3.0

I

O

=4 mA

0.36 0.44 0.55

4.5

I

O

=8 mA

0.36 0.44 0.55

I

OZ

High Impedance
Output Leakage
Current

5.5

V

I=VIH

or V

IL

VO= 5.5 or GND

±0.25 ± 2.5 ± 5 µA

I

I

Input Leakage
Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

I

OPD

Power down Output
Leakage Current

0

V

O

= 5.5

0.5 5 10 µA