SGS Thomson Microelectronics 74V2G04STR, 74V2G04CTR Datasheet
1/7June 2003
■ HIGH SPEED: t
PD
= 3.8ns (TYP.) at VCC=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) atTA=25°C
■ HIGH NOISE IMMUNITY:
V
NIH=VNIL
= 28% VCC(MIN.)
■ POWER DOWN PROTECTION ON INPUT
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)atVCC=4.5V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANG E:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G04 is an advanced high-speed CMOS
TRIPLE INVERTER fabricated with sub-micron
silicon gate and double-layer me tal wiring C
2
MOS
technology.
The internal circuit i s composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no rega rd to
the supply voltage. This device can be used to
interface5Vto3V.
74V2G04
TRIPLE INVERTER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G04STR
SOT23-8L
74V2G04
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) VINfrom30% to 70% of V
CC
PIN N° SYMBOL NAME QND FUNCTION
1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs
4 GND Ground (0V)
8
V
CC
Positive Supply Voltage
AY
LH
HL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=3.3±0.3V)
(V
CC
= 5.0 ± 0.5V)
0 to 100
0to20
ns/V
ns/V
74V2G04
3/7
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
/3
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V
3.0to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
IO=-50 µA
1.9 2.0 1.9 1.9
V
3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
4.5
I
O
=-50 µA
4.4 4.5 4.4 4.4
3.0
I
O
=-4 mA
2.58 2.48 2.4
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output
Voltage
2.0
IO=50 µA
0.0 0.1 0.1 0.1
V
3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
0to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
5.5
V
I=VCC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLHtPHL
Propagation Delay
Time
3.3
(*)
15 5.0 7.0 1.0 8.5 1.0 9.5
ns
3.3
(*)
50 6.1 9.0 1.0 10.5 1.0 11.5
5.0
(**)
15 3.8 5.5 1.0 6.5 1.0 7.5
5.0
(**)
50 4.7 7.5 1.0 8.5 1.0 9.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation
Capacitance
(note 1)
10 pF
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