SGS Thomson Microelectronics 74V2G00STR, 74V2G00CTR Datasheet
1/7June 2003
■ HIGH SPEED: t
PD
= 3.7ns (TYP.) at VCC=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) atTA=25°C
■ HIGH NOISE IMMUNITY:
V
NIH=VNIL
= 28% VCC(MIN.)
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL=8mA(MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANG E:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The V2G00 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-l a yer metal
wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is prov ide d on all inputs
and 0 to 7V can be acc epted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
74V2G00
DUAL 2-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G00STR
SOT23-8L SOT323-8L
74V2G00
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Rating are those value beyond which damage to the device may occour. Functional operation under these condition is
not implied
RECOMMENDED OPERATING CONDITIONS
1) VINfrom30% to 70% of V
CC
PIN No SYMBOL NAME QND FUNCTION
1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output
4 GND Ground (0V)
8
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
Symbol Parameter² Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCCor Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperqture
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=3.3±0.3V)
(V
CC
= 5.0 ± 0.5V)
0 to 100
0to20
ns/V
ns/V
74V2G00
3/7
DC SPECIFICATION
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
(*) Voltage range is 3.3V± 0.3V
(**) Voltage range is 5.0V ± 0.5V
CAPACITANCE CHARACTERISTICS
1) CPDis defined as the value of the IC’s internal equivqlent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V
3.0to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V
3.0to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Ouput
Voltage
2.0
I
O
=-50 µA
1.9 2.0 1.9 1.9
V
3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
4.5
I
O
=-50 µA
4.4 4.5 4.4 4.4
3.0
I
O
=-4 mA
2.58 2.48 2.4
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output
Voltage
2.0
IO=50 µA
0.0 0.1 0.1 0.1
V
3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
0to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
5.5
V
I=VCC
or GND
22020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLHtPHL
Propagation Delay
Time
3.3
(*)
15 5.5 7.9 1.0 9.5 1.0 9.5
ns
3.3
(*)
50 8.0 11.4 1.0 13.0 1.0 13.0
5.0
(**)
15 3.7 5.5 1.0 6.5 1.0 6.5
5.0
(**)
50 5.2 7.5 1.0 8.5 1.0 8.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation
Capacitance
(note 1)
19 pF
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