SGS Thomson Microelectronics 74V1T86STR, 74V1T86CTR Datasheet

1/9July 2001
HIGH SPEED: t
PD
= 4.8ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
CC
= 1µA(MAX.) at TA=25°C
COMPA TIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), VIL = 0.8V (MAX)
POWER DOWN PROTECTION ON INPUT S
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 8mA (MIN) at VCC = 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T86 is an advanc ed high-speed CM OS SINGLE EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
74V1T86
SINGLE EXCLUSIVE OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1T86STR
SOT323-5L 74V1T86CTR
SOT323-5LSOT23-5L
74V1T86
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
RECOMMENDED OPERATING CONDITIONS
1) VIN from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
1 1A Data Input 2 1B Data Input 4 1Y Data Output 3 GND Ground (0V) 5
V
CC
Positive Supply Voltage
ABY
LLL
LHH HLH HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (note 2) -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (note 2) 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
74V1T86
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I
CC(opr)
= CPD x VCC x fIN + I
CC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
4.5 to
5.5
222V
V
IL
Low Level Input Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output Voltage
4.5
IO=-50 µA 4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA 3.94 3.8 3.7
V
OL
Low Level Output Voltage
4.5
IO=50 µA 0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA 0.36 0.44 0.55
I
I
Input Leakage Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply Current
5.5
V
I
= VCC or GND
11020µA
I
CC
Additional Worst Case Supply Current
5.5
One Input at 3.4V, other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay Time
5.0 (*) 15 4.8 7.0 1.0 8.0 1.0 9.0 ns
5.0 (*) 50 5.3 7.5 1.0 8.5 1.0 9.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
PD
Power Dissipation Capacitance (note 1)
14 pF
74V1T86
4/9
TEST CIRCUIT
CL = 15/50pF or e qui valent (inc lu des jig and probe capacitance) R
T
= Z
OUT
of pulse generator (typically 50)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 5 0% duty cycle)
74V1T86
5/9
DIM.
mm. mils
MIN. TYP MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
e0.95 37.4
e1 1.9 74.8
L 0.35 0.55 13.7 21.6
SOT23-5L MECHANICAL DATA
74V1T86
6/9
DIM.
mm. mils
MIN. TYP MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
e0.65 25.6
e1 1.3 51.2
L 0.10 0.30 3.9 11.8
SOT323-5L MECHANICAL DATA
74V1T86
7/9
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 180 7.086 C 12.8 13.0 13.2 0.504 0.512 0.519 D 20.2 0.795 N 60 2.362
T 14.4 0.567 Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161
P 3.9 4.0 4.1 0.153 0.157 0.161
Tape & Reel SOT23-xL MECHANICAL DATA
74V1T86
8/9
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 175 180 185 6.889 7.086 7.283
C 12.8 13 13.2 0.504 0.512 0.519
D 20.2 0.795
N 59.5 60 60.5 2.362
T 14.4 0.567 Ao 2.25 0.088 Bo 2.7 0.106 Ko 1.2 0.047 Po 3.98 4 4.2 0.156 0.157 0.165
P 3.98 4 4.2 0.156 0.157 0.165
Tape & Reel SOT323-xL MECHANICAL DATA
74V1T86
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by implica tion or otherwise under any patent or patent righ ts of S TMic roelec tronics. Specifications mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Prin ted in Italy - All Rights Reserved
STMicr o el ectronics GROU P OF COMPANIE S
Australi a - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malay sia - Malta - Morocco
Singapo re - Spain - Swe den - Switzerl and - United K i ngdom
© http://www.st.com
9/9
Loading...