SGS Thomson Microelectronics 74V1T86STR, 74V1T86CTR Datasheet
1/9July 2001
■ HIGH SPEED: t
PD
= 4.8ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at TA=25°C
■ COMPA TIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), VIL = 0.8V (MAX)
■ POWER DOWN PROTECTION ON INPUT S
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 8mA (MIN) at VCC = 4.5V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T86 is an advanc ed high-speed CM OS
SINGLE EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V1T86
SINGLE EXCLUSIVE OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1T86STR
SOT323-5L 74V1T86CTR
SOT323-5LSOT23-5L
74V1T86
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
1) VIN from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5
V
CC
Positive Supply Voltage
ABY
LLL
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (note 2) -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (note 2) 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
74V1T86
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I
CC(opr)
= CPD x VCC x fIN + I
CC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
4.5 to
5.5
222V
V
IL
Low Level Input
Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output
Voltage
4.5
IO=-50 µA 4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA 3.94 3.8 3.7
V
OL
Low Level Output
Voltage
4.5
IO=50 µA 0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA 0.36 0.44 0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I
= VCC or GND
11020µA
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0 (*) 15 4.8 7.0 1.0 8.0 1.0 9.0
ns
5.0 (*) 50 5.3 7.5 1.0 8.5 1.0 9.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
PD
Power Dissipation
Capacitance
(note 1)
14 pF
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