SGS Thomson Microelectronics 74V1T80STR, 74V1T80CTR Datasheet

74V1T80

SINGLE POSITIVE EDGE TRIGGERED

D-TYPE FLIP-FLOP

■ HIGH SPEED:

f

= 180MHz (TYP.) at VCC = 5V

MAX

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ COMPATIBLE WITH TTL OUTPUTS:

V

= 2V (MIN), VIL = 0.8V (MAX)

IH

■ POWER DOWN PROTECTION ON INPUT S

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 8mA (MIN) at VCC = 4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOL TAGE RANGE:

V

CC

■ IMPROVED LATCH-UP IMMUNITY

PHL

(OPR) = 4.5V to 5.5V

DESCRIPTION

The 74V1T80 is an advanc ed high-speed CM OS
SINGLE POSITIVE EDGE TRIGGERED D-TYPE
FLIP-FLOP WITH INVERTED OUTPUT
fabricated with sub-micron silicon gate and
double-layer metal wiring C

2

MOS technology. it is
designed to operate from 4.5V to 5.5V, making
this device ideal for portable applications.
This D-Type flip-flop is controlled by a clock input
(CK). On the positive transition of the clock, the Q
output will be set to the logic inverted sta te that
was setup at the D input.

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1T80STR

SOT323-5L 74V1T80CTR

Following the hold time interval, data at the D input
can be changed without affecting the level at the
output. Power down protection is provided on
input and 0 to 7V can be accepted on input with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
It’s available in the commercial temperature
range. All inputs and output are equipped with
protection circuits against stat ic discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9July 2001

74V1T80

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 D Data Input
2CK
4Q

3 GND Ground (0V)
5

TRUTH TABLE

DCKQ

LH

HL

LQn

HQn

ABSOLUTE MAXIMUM RATINGS

V

CC

Clock Input (Positive
Edge)

Inverted Flip-Flop Output

Positive Supply Voltage

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) VIN from 0.8V to 2V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

= 5.0 ± 0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

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DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I



High Level Input

IH

Voltage
Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

I

Additional Worst

CC

Case Supply
Current

Test Condition Value

T

= 25°C

V

CC

(V)

4.5 to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5 to

5.5

4.5

4.5

4.5

4.5

0 to

5.5

5.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

I

=-8 mA 3.94 3.8 3.7

O

IO=50 µA 0.0 0.1 0.1 0.1 V

I

=8 mA 0.36 0.44 0.55

O

V

= 5.5V or GND

I

= VCC or GND

V

I

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V1T80

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

= tf = 3ns)

r

Test Condition Value

Symbol Parameter

t

PLH tPHL

f

MAX

(*) Vol tage range is 5.0V ± 0.5V

Propagation Delay
Time CK to Q

CK Pulse Width,

t

W

HIGH or LOW

t

Setup Time D to

s

CK, HIGH or LOW

t

Hold Time D to CK,

h

HIGH or LOW
Maximum Clock

Frequency

= 25°C

V

(V)

CC

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 4.9 8.4 1.0 9.8 1.0 10.8 ns

5.0 (*) 50 5.9 12.0 1.0 14.0 1.0 15.0

5.0 (*) 50 4.0 4.0 4.0 ns

5.0 (*) 50 4.0 4.0 4.0 ns

5.0 (*) 50 1.0 1.0 1.0 ns

5.0 (*) 50
165 180 150 150

-40 to 85°C -55 to 125°C

Unit

MHz

T

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance
(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circ ui t). Average operating current can be obtained by the following equa tion. I

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

4101010pF

8pF

= CPD x VCC x fIN + I

CC(opr)

CC

Unit

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