SGS Thomson Microelectronics 74V1T77STR, 74V1T77CTR Datasheet

74V1T77

SINGLE D-TYPE LATCH

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OUTPUTS:

V

= 2V (MIN), VIL = 0.8V (MAX)

IH

■ POWER DOWN PROTECTION ON INPUT S

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 8mA (MIN) at VCC = 4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

■ IMPROVED LATCH-UP IMMUNITY

PHL

(OPR) = 4.5V to 5.5V

= 4.7ns (TYP.) at VCC = 5V

PD

DESCRIPTION

The 74V1T77 is an advanc ed high-speed CM OS
SINGLE D-TYPE LATCH fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology. It is designed to
operate from 4.5V to 5.5V, making this device
ideal for portable applications.

The single D-Type latch is controlled by an Latch
Enable Input (LE). While the L E input is held at a
high level, the Q output will follow the data input
precisely. When the LE input is taken low the Q

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1T77STR

SOT323-5L 74V1T77CTR

output is latched p recisely at the logic level of D
data input.
Power down protection is provided on in puts and
0 to 7V c an be accepted on inputs with no regard
to the supply voltage. This device can be used to
interface 5V to 3V.
It’s available in the commercial and extended
temperature range.
All inputs and output are equippe d with prot ection
circuits against stati c disc harge , giving t hem ES D
immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/10July 2001

74V1T77

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 D Data Input
2 LE Latch Enable Input
4 Q Data Output
3 GND Ground (0V)

V

CC

ABSOLUTE MAXIMUM RATINGS

5

TRUTH TABLE

DLEQ

L L No Change *

H L No Change *

LHL

HHH

(*) Q outp ut is l at ched at the time when the LE inp ut is ta ken low
logic level.

Positive Supply Voltage

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) VIN from 0.8V to 2V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

= 5.0 ± 0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

2/10

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I



High Level Input

IH

Voltage
Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

I

Additional Worst

CC

Case Supply
Current

Test Condition Value

T

= 25°C

V

CC

(V)

4.5 to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5 to

5.5

4.5

4.5

4.5

4.5

0 to

5.5

5.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

I

=-8 mA 3.94 3.8 3.7

O

IO=50 µA 0.0 0.1 0.1 0.1 V

I

=8 mA 0.36 0.44 0.55

O

V

= 5.5V or GND

I

= VCC or GND

V

I

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V1T77

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

= tf = 3ns)

r

Test Condition Value

Symbol Parameter

t

PLH tPHL

t

PLH tPHL

(*) Vol tage range is 5.0V ± 0.5V

Propagation Delay
Time LE to Q

Propagation Delay
Time D to Q

t

LE Pulse Width,

W

HIGH

t

Setup Time D to

s

LE, HIGH or LOW
Hold Time D to LE,

t

h

HIGH or LOW

T

V

(V)

CC

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 4.4 6.5 1.0 7.5 1.0 8.5

5.0 (*) 50 4.8 7.0 1.0 8.0 1.0 9.0

5.0 (*) 15 4.7 6.5 1.0 7.5 1.0 8.5

5.0 (*) 50 5.3 7.0 1.0 8.0 1.0 9.0

5.0 (*) 3.0 3.0 3.0

5.0 (*)

5.0 (*)

2.0 2.0 2.0

1.0 1.0 1.0

-40 to 85°C -55 to 125°C

Unit

ns

ns
ns

ns

ns

= 25°C

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

4101010pF

8pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + I

CC(opr)

CC

Unit

3/10