SGS Thomson Microelectronics 74V1T70STR, 74V1T70CTR Datasheet
1/9July 2001
■ HIGH SPEED: t
PD
=3.6ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at TA=25°C
■ COMPAT I B LE WITH TT L OUTPUTS:
V
IH
= 2V (MIN), VIL = 0.8V (MAX)
■ POWER DOWN PROTECTION ON INPUT
■ SYMMETRICAL OUTPUT IMPED ANCE:
|I
OH
| = IOL = 8mA (MIN) at VCC = 4.5V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T70 is an advanc ed high-speed CM OS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high no ise
immunity and stable output.
Power down protection is provided on inpu t an d 0
to 7V can be acce pted on inp ut with no rega rd to
the supply voltage. This device can be used to
interface 5V to 3V.
74V1T70
SINGLE BUFFER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1T70STR
SOT323-5L 74V1T70CTR
SOT323-5LSOT23-5L
74V1T70
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) VIN from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
1 NC Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5
V
CC
Positive Supply Voltage
AY
LL
HH
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
74V1T70
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5. 0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circuit). Average operating current can be obtained by t he following equation. I
CC(opr)
= CPD x VCC x fIN + I
CC
Symbol P arameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
4.5 to
5.5
222V
V
IL
Low Level Input
Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OH
High Level Output
Voltage
4.5
IO=-50 µA 4.4 4.5 4.4 4.4 V
4.5
I
O
=-8 mA 3.94 3.8 3.7
V
OL
Low Level Output
Voltage
4.5
IO=50 µA 0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA 0.36 0.44 0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I
= VCC or GND
11020µA
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0 (*) 15 3.6 6.0 1.0 7.0 1.0 8.0
ns
5.0 (*) 50 4.0 6.5 1.0 7.5 1.0 8.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
PD
Power Dissipation
Capacitance
(note 1)
14 pF
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