SGS Thomson Microelectronics 74V1T70 Datasheet



■ HIGHSPEED:t

■

LOW POWER DISSIPATION:
I

=1 µA (MAX.)at TA=25oC

CC

■

COMPATIBLEWITHTTLOUTPUTS:
V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWNPROTECTIONON INPUT

■

SYMMETRICALOUTPUTIMPEDANCE:
|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

(OPR)= 4.5Vto 5.5V

V

CC

■ IMPROVEDLATCH-UPIMMUNITY

=5.5ns(TYP.)atVCC=5V

PD

DESCRIPTION

The 74V1T70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layermetal wiring C

2

MOS

technology.

74V1T70

SINGLE BUFFER

PRELIMINARY DATA

S

(SOT23-5L)

ORDERCODE:

74V1T70S 74V1T70C

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.

Power down protection is provided on inputand 0
to 7V can be accepted on inputwith no regard to
the supply voltage. This device can be used to
interface5V to 3V.

C

(SC-70)

PIN CONNECTION AND IEC LOGICSYMBOLS

October 1999

1/7

74V1T70

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND F U NCTIO N

1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LL

HH

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

20 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom0.8Vto 2V

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

Input Rise and Fall Time (see note 1) (V

=5.0±0.5V)

CC

CC

0 to 20 ns/V

V

o

C

74V1T70

DC SPECIFICATIONS

Symb o l Para met er Test Con diti o ns Val u e Uni t

T

V

CC

High Level Input

V

IH

(V)

4.5 to 5.5 2 2 V

Min. Typ. Max. Min. Max.

Voltage

V

IL

Low Level Input

4.5 to 5.5 0.8 0.8 V

Voltage
High Level Output

V

OH

Voltage
Low Level Output

V

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

4.5 IO=-50 µA 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50µA 0.0 0.1 0.1

4.5 I

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 1 10 µA

Current
Additional Worst Case

I

∆

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

=25oC -40 to 85oC

A

1.35 1.5 mA

V

V

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Condition Value Unit

(*)

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerange is5V ± 0.5V

V

CC

(V)

C

(pF)

L

Min. Typ. Max. Min. Max.

5.0 15 4.7 6.7 1.0 7.5

5.0

50

=25oC -40 to 85oC

T

A

5.5 7.7 1.0 8.5

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Con diti o ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

11 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+I

CC

CC

pF

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