SGS Thomson Microelectronics 74V1T66STR Datasheet

1/11July 2001

■ HIGH SPEED:

t

PD

= 0.3ns (TYP.) at VCC = 5V

■ LOW POWER DISSIPATION:

I

CC

= 1µA(MAX.) at TA=25°C

■ LOW "ON" RESISTANCE:

R

ON

= 6.5Ω (TYP.) AT VCC = 5V I

I/O

= 1mA

■ SINE WAVE DISTORTION:

0.04% AT V

CC

= 5V f = 1KHz

■ COMPATIBLE WI TH TTL OUTPUTS ON

CONTROL PIN: V

IH

= 2V (MIN), VIL = 0.8V (MAX)

■ OPERATING VOLTAG E RAN GE:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1T66 is an advanc ed high-speed CM OS SINGLE BILATERAL SWITCH fabricated in silicon gate C

2

MOS technology. It achieves hi gh speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signal s that m ay v ary across the full power supply range (from GND to V

CC

). The C input is provided to cont rol the switch a nd it’s compatible with standard TTL output; the switch is ON (port I/O is connected to Port O/I)

when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many application as Battery Powered System, Test Equipment. It’s available in the commercial and extended temperature range in SOT23-5L and SC-70-5L package. All inputs and output are equippe d with prot ection circuits against stati c disc harge , giving t hem ES D immunity and transient excess voltage.

74V1T66

SINGLE BILATERAL SWITCH

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1T66STR

SOT323-5L 74V1T66CTR

SOT323-5LSOT23-5L

74V1T66

2/11

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

* High Impedance Stat e

ABSOLUTE MAXIMUM RATI N GS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

RECOMMENDED OPERATING CONDITIONS

1) VIN from 0.8V to 2V on control pin

PIN No SYMBOL NAME AND FUNCTION

1 I/O Independent Input/Output 2 O/I Independent Output/Input

4C

Enable Input (Active

HIGH) 3 GND Ground (0V) 5

V

CC

Positive Supply Voltage

CONTROL SWITCH FUNCTION

HON

L OFF *

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage -0.5 to VCC + 0.5

V

IC

DC Control Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC + 0.5

V

I

IK

DC Input Diode Current

± 20 mA

I

IK

DC Control Input Diode Current

- 20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 50 mA

I

CC

or I

GND

DC VCC or Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

300 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage 0 to V

CC

V

IC

Control Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) V

CC

= 5.0V

0 to 20 ns/V

74V1T66

3/11

DC SPECIFICATIONS

(*) Vol tage range is 5V ± 0.5V

AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 3ns)

(*) Vol tage range is 5. 0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input Voltage

5.0

(*)

222V

V

IL

Low Level Input Voltage

5.0

(*)

0.8 0.8 0.8 V

R

ON

ON Resistance

5.0

(*)

VIC = VIH

V

I/O

= VCC to GND

I

I/O

≤ 1mA

7.5 10 12 14

V

R

ON

ON Resistance

5.0

(*)

VIC = VIH

V

I/O

= VCC or GND

I

I/O

≤ 1mA

6.5 8.5 10 12

V

I

OFF

Input/Output Leakage Current (SWITCH OFF)

5.5

VOS = VCC to GND

V

IS

= VCC to GND

V

IC

= V

IL

±0.1 ± 1 ± 5 µA

I

IZ

Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN)

5.5

V

OS

= VCC to GND

V

IC

= V

IH

±0.1 ± 1 ± 5 µA

I

IN

Control Input Leakage Current

0 to

5.5

V

IC

= 5.5V or GND

± 0.1 ± 1.0 ± 1.0 µA

I

CC

Quiescent Supply Current

5.5

V

I

= VCC or GND

11020µA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PD

Delay Time

5.0

(*)

tr = tf = 6ns

0.3 0.6 1.0 2.0 ns

t

PLZ

t

PHZ

Output Disable Time

5.0

(*)

RL = 500 Ω

5.0 7.5 9.0 10.0 ns

t

PZL

t

PZH

Output Enable Time

5.0

(*)

RL = 1 KΩ

2.0 4.0 5.0 7.0 ns

74V1T66

4/11

CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circ ui t). Averag e operatin g current can be obtained by t he following equation. I

CC(opr)

= CPD x VCC x fIN + I

CC

ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C)

(*) Vol tage range is 5. 0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

3101010pF

C

I/O

Output Capacitance

10 pF

C

PD

Power Dissipation Capacitance (note 1)

3pF

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

V

IN

(V

p-p

)

Typ.

Sine Wave Distortion (THD)

5.0(*) 4

f

IN

= 1 KHz RL = 10 KΩ, CL = 50 pF

0.04 %

f

MAX

Frequency Response (Switch ON)

5.0(*) Adjust fIN voltage to obtain 0 dBm at VOS. Increase f

IN

Frequency until dB meter reads -3dB

R

L

= 50Ω, CL = 10 pF

180 MHz

Feed through Attenuation (Switch OFF)

5.0(*) V

IN

is centered at VCC/2

Adjust f

IN

Voltage to obtained 0dBm at VIS

R

L

= 600Ω, CL = 50 pF, fIN = 1KHz sine wave

-60 dB

Crosstalk (Control Input to Signal Output)

5.0(*) R

L

= 600Ω, CL = 50 pF, fIN = 1KHz square wave

t

r

= tf = 6ns

60 mV