SGS Thomson Microelectronics 74V1T14 Datasheet

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74V1T14

SINGLE SCHMITT INVERTER

■ HIGHSPEED:t

■ LOW POWERDISSIPATION:

=1 µA (MAX.) at TA=25oC

I

CC

■ TYPICALHYSTERESIS:V

■ POWERDOWNPROTECTIONON INPUT

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 4.5Vto 5.5V

CC

■ IMPROVEDLATCH-UP IMMUNITY

=4.7ns (TYP.)atVCC=5V

PD

=0.7VATVCC=4.5V

h

DESCRIPTION

The 74V1T14 is an advanced high-speed CMOS
SINGLE SCHMITT INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stable output.

Power down protection is provided on input and 0
to 7V can be acceptedon inputwith no regard to
the supply voltage. This device can be used to

S

(SOT23-5L)

C

(SC-70)

ORDERCODE:

74V1T14S 74V1T14C

interface5V to 3V.
Pin configuration and function are the same as
those of the V1G04 but the V1G14 has
hysteresis.
The schmitt trigger function allows it to be used
on line receivers with slow rise/fall input signals.

PIN CONNECTION AND IEC LOGIC SYMBOLS

October 1999

1/7

74V1T14

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCTI O N

1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functionaloperationunder thesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

20 mA

±

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

CC

V

o

C

74V1T14

DC SPECIFICATIONS

Symb o l Para met er Test Condit i o ns Val u e Uni t

T

V

CC

(V)

High Level Input

V

t+

Voltage
Low Level Input

V

t-

Voltage
Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4

V

h

4.5 2.0 2.0

5.5 2.0 2.0

4.5 0.6 0.6

5.5 0.6 0.6

Min. Typ. Max. Min. Max.

5.5 0.4 1.5 0.4 1.5

High Level Output

V

OH

Voltage
Low Level Output

V

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

4.5 IO=-50µA 4.4 4.5 4.4

4.5 I

=-8 mA 3.94 3.8

O

4.5 IO=50 µA 0.0 0.1 0.1

4.5 I

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 1 10 µA

Current

∆I

Additional Worst Case

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

=25oC -40 to 85oC

A

1.35 1.5 mA

V

V

V

V

V

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Condition Value Unit

(*)

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerangeis5V ± 0.5V

V

CC

(V)

CL

(pF)

5.0 15 5.0 7.5 1.0 9.0

5.0

50

TA=25oC -40 to 85oC

Min. Typ. Max. Min. Max.

6.5 8.5 1.0 10.0

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Condit i o ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10 pF

C

IN

Power Dissipation

C

PD

Capacitance (note 1)

1)CPDisdefinedasthevalueoftheIC’sinternal equivalent capacitance whichiscalculated fromtheoperatingcurrentconsumptionwithout load.(Referto
TestCircuit).Averageoperatingcurrent canbe obtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+I

CC

12 pF

CC

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