SGS Thomson Microelectronics 74V1T126 Datasheet
SINGLE BUS BUFFER (3-STATE)
■ HIGHSPEED:t
■ LOW POWER DISSIPATION:
=1 µA (MAX.)at TA=25oC
I
CC
■ COMPATIBLEWITH TTL OUTPUTS:
=2V(MIN),VIL=0.8V(MAX)
V
IH
■ POWERDOWNPROTECTIONON INPUT
■ SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5Vto 5.5V
CC
■ IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The 74V1T126 is an advanced high-speed
CMOS SINGLE BUS BUFFER fabricated with
sub-micron silicon gate and double-layer metal
wiringC
2
MOStechnology.
=3.8ns(TYP.)atVCC=5V
PD
74V1T126
PRELIMINARY DATA
S
(SOT23-5L)
ORDERCODE:
74V1T126S 74V1T126C
3-STATE control input G has to be set LOW to
place the output into thehigh impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
C
(SC-70)
PIN CONNECTION AND IEC LOGICSYMBOLS
October 1999
1/8
74V1T126
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1 1G Output Enable Input
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V
CC
Positive Supply Voltage
TRUTH TABLE
AGY
XLZ
LHL
HHH
X:”H” or”L” Z:HighImpedance
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom0.8Vto2 V
2/8
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
Input Rise and Fall Time (see note 1) (V
=5.0±0.5V)
CC
CC
0 to 20 ns/V
V
o
C
74V1T126
DC SPECIFICATIONS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
V
CC
High Level Input
V
IH
(V)
4.5 to 5.5 2 2 V
Min. Typ. Max. Min. Max.
Voltage
V
IL
Low Level Input
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
High Impedance
I
OZ
Output Leakage
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
=-8 mA 3.94 3.8
O
4.5 IO=50µA 0.0 0.1 0.1
4.5 I
5.5
=8 mA 0.36 0.44
O
VI=VIHor V
IL
VO=VCCor GND
Current
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 1 10 µA
Current
∆I
Additional Worst Case
CC
Supply Current
5.5 One Input at 3.4V,
other input at V
CC
or
GND
=25oC -40 to 85oC
A
±0.25 ±2.5 µA
1.35 1.5 mA
V
V
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
(*)
t
Propagation Delay
PLH
t
Time
PHL
Output Disable Time 5.0 15 4.6 6.8 1.0 8.0
t
PLZ
t
PHZ
t
Output Enable Time 5.0 15 3.6 5.1 1.0 6.0
PZH
t
PZL
(*)Voltagerange is5V ± 0.5V
V
CC
(V)
C
(pF)
L
Min. Typ. Max. Min. Max.
5.0 15 3.8 5.5 1.0 6.5
5.0
50
5.0 50 6.1 8.8 1.0 10.0
5.0 50 5.1 7.1 1.0 8.0
=25oC -40 to 85oC
T
A
5.3 7.5 1.0 8.5
ns
ns
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
C
Output Capacitance 10
OUT
Power Dissipation
C
PD
14 pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+I
CC
CC
pF
pF
3/8
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