SGS Thomson Microelectronics 74V1T07 Datasheet

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74V1T07

SINGLE BUFFER (OPEN DRAIN)

■ HIGHSPEED:t

■

LOW POWERDISSIPAT ION:
I

=1 µA (MAX.) at TA=25oC

CC

■

COMPATIBLEWITHTTLOUTPUTS:
V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWN PROTECTIONON INPUT

■

OPERATINGVOLTAGERANGE:
V

(OPR)= 4.5Vto 5.5V

CC

■ IMPROVEDLATCH-UP IMMUNITY

=4.7ns (TYP.)atVCC=5V

PD

DESCRIPTION

The 74V1T07 is an advancedhigh-speed CMOS
SINGLE BUFFER (OPEN DRAIN) fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.

S

(SOT23-5L)

C

(SC-70)

ORDERCODE:

74V1T07S 74V1T07C

Power down protection is provided on inputand 0
to 7V can be acceptedon inputwith no regard to
the supply voltage. This device can be used to
interface5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

October 1999

1/7

74V1T07

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCTION

1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LL

HZ

Z = High impedance

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

20 mA

±

25 mA

±

50 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom0.8Vto 2 V

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

Input Rise and Fall Time (see note 3) (V

=5.0±0.5V)

CC

CC

0 to 20 ns/V

V

o

C

74V1T07

DC SPECIFICATIONS

Symb o l Para met er Test Conditio ns Val u e Uni t

T

V

CC

V

IH

High Level Input

(V)

4.5 to 5.5 2 2 V

Min. Typ. Max. Min. Max.

Voltage

V

IL

Low Level Input

4.5 to 5.5 0.8 0.8 V

Voltage
Low Level Output

V

OL

Voltage
High Impedance

I

OZ

Output Leakage

4.5 IO=50 µA 0.0 0.1 0.1

4.5 I

5.5

=8 mA 0.36 0.44

O

VI=VIHor V

IL

VO=VCCor GND

Current
Input Leakage Current 0 to 5.5 VI= 5.5V or GND

I

I

Quiescent Supply

I

CC

5.5 VI=VCCorGND 1 10 µA

Current
Additional Worst Case

I

∆

CC

Supply Current

5.5 One Input at 3.4V,
other input at V

CC

or

GND

=25oC -40 t o 85oC

A

0.25

±

0.1

±

1.35 1.5 mA

2.5

±

1.0

±

µ

µ

V

A

A

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Condition Value Unit

V

(*)

t

Propagation Delay

PLZ

t

Time

PZL

(*)Voltagerangeis5V ±0.5V

CC

(V)

C

(pF)

L

Min. Typ. Max. Min. Max.

5.0 15 3.3 4.5 1.0 5.4

5.0

50

=25oC -40 t o 85oC

T

A

4.7 6.1 1.0 7.1

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Conditio ns Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

C

Output Capacitance 5

OUT

Power Dissipation

C

PD

9pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+I

CC

CC

pF
pF

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