SGS Thomson Microelectronics 74V1T04 Datasheet

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74V1T04

SINGLE INVERTER

■ HIGHSPEED:t

■ LOW POWERDISSIPAT ION:

=1 µA (MAX.) at TA=25oC

I

CC

■ COMPATIBLEWITH TTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWERDOWN PROTECTIONON INPUT &

=4.7ns (TYP.)atVCC=5V

PD

OUTPUT

■ SYMMETRICALOUTPUT IMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

(OPR)= 4.5Vto 5.5V

V

CC

■ IMPROVEDLATCH-UP IMMUNITY

DESCRIPTION

The 74V1T04 is an advancedhigh-speed CMOS SINGLE INVERTER fabricated with sub-micron silicon gate and double-layermetal wiring C

2

MOS

S

(SOT23-5L)

C

(SC-70)

ORDERCODE:

74V1T04S 74V1T04C

technology. The internal circuit is composed of 3 stages

including buffer output, which provide high noise immunityand stableoutput.

Power down protection is provided on inputand 0 to 7V can be acceptedon input with no regard to the supply voltage. This device can be used to interface5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

October 1999

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74V1T04

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1 N.C. Not Connected 2 1A Data Input 4 1Y Data Output 3 GND Ground (0V) 5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V V V

I I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.

1)V

=0V

CC

2)HighorLowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current DC Output Current

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

20 mA

±

25 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V V V

T

dt/dv Input Rise and Fall Time (see note 3) (V

1)VCC=0V

2)HighorLowState from0.8Vto 2 V

3)V

IN

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

=5.0±0.5V) 0 to 20 ns/V

CC

V

o

C

74V1T04

DC SPECIFICATIONS

Symb o l Para met er Test Co n ditions Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

0.1

±

1.0

±

1.35 1.5 mA

µ

V

I

∆

I

OPD

V

CC

(V)

High Level Input

IH

4.5 to 5.5 2 2 V

Voltage Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage High Level Output

OH

Voltage Low Level Output

OL

Voltage Input Leakage Current 0 to 5.5 VI= 5.5V or GND

I

Quiescent Supply

CC

4.5 IO=-50 µA 4.4 4.5 4.4

4.5 I

4.5 IO=50 µA 0.0 0.1 0.1

4.5 I

5.5 VI=VCCorGND 1 10 µA

Current Additional Worst Case

I

CC

Supply Current

Output Leakage

5.5 One Input at 3.4V, other input at V

0V

Current

=-8 mA 3.94 3.8

O

=8 mA 0.36 0.44

O

or

CC

GND

= 5.5V 0 0.5 5.0 µA

OUT

V

A

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Conditi on Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerangeis5V ±0.5V

V

(*)

CC

(V)

C

(pF)

L

5.0 15 4.7 6.7 1.0 7.5

5.0 50 5.5 7.7 1.0 8.5

T

=25oC -40 t o 85oC

A

Min. Typ. Max. Min. Max.

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Co n ditions Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

14 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperatingcurrent consumptionwithout load.(Referto TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC•fIN+I

CC

pF

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