SGS Thomson Microelectronics 74V1T03CTR Datasheet

1/9July 2001
HIGH SPEED: t
PD
= 5.4ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
CC
= 1µA(MAX.) at TA=25°C
COMPA TIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), VIL = 0.8V (MAX)
POWER DOWN PROTECTION ON INPUT S
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T03 is an advanc ed high-speed CM OS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages including buffer output, which provide high no ise immunity and stable output.
The device can, with an external pull-up resistor, be used in wired AND configuration. This d evice
can also be used as a led driver in any other application requiring current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
74V1T03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1T03STR
SOT323-5L 74V1T03CTR
SOT323-5LSOT23-5L
74V1T03
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
Z: High Impedance State
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
RECOMMENDED OPERATING CONDITIONS
1) VIN from 0.8V to 2V
PIN No SYMBOL NAME AND FUNCTION
1 1A Data Input 2 1B Data Input 4 1Y Data Output 3 GND Ground (0V) 5
V
CC
Positive Supply Voltage
ABY
LLZ
LHZ HLZ HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
+ 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
74V1T03
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= tf = 3ns)
(*) Vol tage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I
CC(opr)
= CPD x VCC x fIN + I
CC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
4.5 to
5.5
222V
V
IL
Low Level Input Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OL
Low Level Output Voltage
4.5
IO=50 µA 0.0 0.1 0.1 0.1 V
4.5
I
O
=8 mA 0.36 0.44 0.55
I
OZ
High Impedance Output Leakage Current
5.5
VI = VIH or V
IL
VO = VCC or GND
±0.25 ± 2.5 ± 5.0 µA
I
I
Input Leakage Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply Current
5.5
V
I
= VCC or GND
11020µA
I
CC
Additional Worst Case Supply Current
5.5
One Input at 3.4V, other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PZL
Enable Delay Time
5.0 (*) 15 3.7 7.0 1.0 8.0 1.0 9.0 ns
5.0 (*) 50 4.1 8.0 1.0 9.0 1.0 10.0
t
PLZ
Disable Delay Time
5.0 (*) 15 5.4 7.0 1.0 8.0 1.0 9.0 ns
5.0 (*) 50 5.9 8.0 1.0 9.0 1.0 10.0
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
OUT
Output Capacitance
5101010pF
C
PD
Power Dissipation Capacitance (note 1)
6pF
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