SGS Thomson Microelectronics 74V1T02 Datasheet
74V1T02
SINGLE 2-INPUT NOR GATE
■ HIGHSPEED:t
■ LOW POWERDISSIPATION:
=1 µA (MAX.) at TA=25oC
I
CC
■ COMPATIBLEWITHTTL OUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWERDOWNPROTECTIONON INPUTS&
=3.5ns(TYP.)atVCC=5V
PD
OUTPUT
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
(OPR)= 4.5Vto5.5V
V
CC
■ IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The 74V1T02 is an advancedhigh-speed CMOS
SINGLE 2-INPUT NOR GATE fabricated with
sub-micron silicon gate and double-layer metal
S
(SOT23-5L)
C
(SC-70)
ORDERCODE:
74V1T02S 74V1T02C
2
wiringC
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityandstable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IECLOGIC SYMBOLS
October 1999
1/7
74V1T02
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLH
LHL
HLL
HHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximum Ratingsarethosevaluesbeyond whichdamagetothedevicemayoccur. Functional operationundertheseconditionisnotimplied.
1)V
=0V
CC
2)HighorLowState
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage (see note 1) -0.5 to +7.0 V
O
DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
o
C
o
C
RECOMMENDEDOPERATING CONDITIONS
Symb o l Para met er Value Un it
V
V
V
V
T
dt/dv Input Rise and Fall Time (see note 3) (V
1)VCC=0V
2)HighorLowState
from0.8Vto 2 V
3)V
IN
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage (see note 1) 0 to 5.5 V
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature -40 to +85
op
=5.0±0.5V) 0 to 20 ns/V
CC
CC
V
o
C
74V1T02
DC SPECIFICATIONS
Symb o l Para met er Test Co n ditio ns Val u e Uni t
=25oC -40 t o 85oC
T
A
Min. Typ. Max. Min. Max.
0.1
±
1.0
±
1.35 1.5 mA
µ
V
V
V
V
I
∆
I
OPD
V
CC
(V)
High Level Input
IH
4.5 to 5.5 2 2 V
Voltage
Low Level Input
IL
4.5 to 5.5 0.8 0.8 V
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND
I
I
Quiescent Supply
CC
4.5 IO=-50 µA 4.4 4.5 4.4
4.5 I
4.5 IO=50 µA 0.0 0.1 0.1
4.5 I
5.5 VI=VCCorGND 1 10 µA
Current
Additional Worst Case
I
CC
Supply Current
Output Leakage
5.5 One Input at 3.4V,
other input at V
0V
Current
=-8 mA 3.94 3.8
O
=8 mA 0.36 0.44
O
or
CC
GND
= 5.5V 0 0.5 5.0 µA
OUT
V
V
A
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
(*)
t
Propagation Delay
PLH
Time
t
PHL
(*)Voltagerangeis5V± 0.5V
V
CC
(V)
C
(pF)
L
Min. Typ. Max. Min. Max.
5.0 15 3.5 5.5 1.0 6.5
5.0
50
=25oC -40 t o 85oC
T
A
4.5 7.5 1.0 8.5
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Co n ditio ns Val u e Uni t
=25oC -40 t o 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10 pF
C
IN
Power Dissipation
C
PD
Capacitance (note 1)
1)CPDisdefinedasthevalue oftheIC’sinternalequivalentcapacitance whichiscalculated fromtheoperatingcurrent consumption without load.(Referto
TestCircuit).Averageoperatingcurrentcanbeobtainedbythefollowingequation.I
(opr)=CPD• VCC•fIN+I
CC
17 pF
CC
3/7
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