SGS Thomson Microelectronics 74V1T00STR, 74V1T00CTR Datasheet

1/9July 2001

■ HIGH SPEED: t

PD

= 5.0ns (TYP.) at VCC = 5V

■ LOW POWER DISSIPATION:

I

CC

= 1µA(MAX.) at TA=25°C

■ COMPA TIBLE WITH TTL OUTPUTS:

V

IH

= 2V (MIN), VIL = 0.8V (MAX)

■ POWER DOWN PROTECTION ON INPUT S

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

| = IOL = 8mA (MIN) at VCC = 4.5V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 4.5V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1T00 is an advanc ed high-speed CM OS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high no ise
immunity and stable output.

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.

74V1T00

SINGLE 2-INPUT NAND GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1T00STR

SOT323-5L 74V1T00CTR

SOT323-5LSOT23-5L

74V1T00

2/9

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

RECOMMENDED OPERATING CONDITIONS

1) VIN from 0.8V to 2V

PIN No SYMBOL NAME AND FUNCTION

1 1A Data Input
2 1B Data Input
3 GND Ground (0V)
4 1Y Data Output
5

V

CC

Positive Supply Voltage

ABY

LLH

LHH
HLH
HHL

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC + 0.5

V

I

IK

DC Input Diode Current

- 20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCC or Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

300 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

= 5.0 ± 0.5V)

0 to 20 ns/V

74V1T00

3/9

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r

= tf = 3ns)

(*) Vol tage range is 5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I

CC(opr)

= CPD x VCC x fIN + I

CC

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

4.5 to

5.5

222V

V

IL

Low Level Input
Voltage

4.5 to

5.5

0.8 0.8 0.8 V

V

OH

High Level Output
Voltage

4.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

4.5

I

O

=-8 mA 3.94 3.8 3.7

V

OL

Low Level Output
Voltage

4.5

IO=50 µA 0.0 0.1 0.1 0.1 V

4.5

I

O

=8 mA 0.36 0.44 0.55

I

I

Input Leakage
Current

0 to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1.0 ± 1.0 µA

I

CC

Quiescent Supply
Current

5.5

V

I

= VCC or GND

11020µA



I

CC

Additional Worst
Case Supply
Current

5.5

One Input at 3.4V,
other input at V

CC

or GND

1.35 1.5 1.5 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLH

t

PHL

Propagation Delay
Time

5.0 (*) 15 5.0 7.0 1.0 8.0 1.0 9.0
ns

5.0 (*) 50 5.5 8.0 1.0 9.0 1.0 10.0

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

4101010pF

C

PD

Power Dissipation
Capacitance
(note 1)

13 pF