SGS Thomson Microelectronics 74V1T00 Datasheet

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74V1T00

SINGLE 2-INPUT NAND GATE

■ HIGHSPEED:t

■

LOW POWERDISSIPAT ION:
I

=1 µA (MAX.) at TA=25oC

CC

■ COMPATIBLEWITHTTLOUTPUTS:

=2V(MIN),VIL=0.8V(MAX)

V

IH

■ POWERDOWN PROTECTIONON INPUTS&

=5 ns(TYP.)atVCC=5V

PD

OUTPUT

■ SYMMETRICALOUTPUT IMPEDANCE:

|I

|=IOL=8 mA(MIN)

OH

■

BALANCEDPROPAGATIONDELAYS:

≅ t

t

PLH

PHL

■

OPERATINGVOLTAGERANGE:
V

(OPR)= 4.5Vto 5.5V

CC

■ IMPROVEDLATCH-UP IMMUNITY

DESCRIPTION

The 74V1T00 is an advancedhigh-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

S

(SOT23-5L)

C

(SC-70)

ORDERCODE:

74V1T00S 74V1T00C

The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stableoutput.

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

October 1999

1/7

74V1T00

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V
V
V

I
I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.

1)V

=0V

CC

2)HighorLowState

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage (see note 1) -0.5 to +7.0 V

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V
V
V

T

dt/dv Input Rise and Fall Time (see note 3) (V

1)VCC=0V

2)HighorLowState
from0.8Vto 2 V

3)V

IN

2/7

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage (see note 1) 0 to 5.5 V

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature -40 to +85

op

=5.0±0.5V) 0 to 20 ns/V

CC

CC

V

o

C

74V1T00

DC SPECIFICATIONS

Symb o l Para met er Test Co n ditions Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

0.1

±

1.0

±

1.35 1.5 mA

µ

V

V

V

V

I

∆

I

OPD

V

CC

(V)

High Level Input

IH

4.5 to 5.5 2 2 V

Voltage
Low Level Input

IL

4.5 to 5.5 0.8 0.8 V

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND

I

I

Quiescent Supply

CC

4.5 IO=-50 µA 4.4 4.5 4.4

4.5 I

4.5 IO=50 µA 0.0 0.1 0.1

4.5 I

5.5 VI=VCCorGND 1 10 µA

Current
Additional Worst Case

I

CC

Supply Current

Output Leakage

5.5 One Input at 3.4V,
other input at V

0V

Current

=-8 mA 3.94 3.8

O

=8 mA 0.36 0.44

O

or

CC

GND

= 5.5V 0 0.5 5.0 µA

OUT

V

V

A

AC ELECTRICAL CHARACTERISTICS

(Inputt

r=tf

=3 ns)

Symbol Parameter Test Conditi on Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*)Voltagerangeis5V ±0.5V

V

CC

(V)

(*)

C

L

(pF)

5.0 15 5.0 7.0 1.0 8.0

5.0 50 5.5 8.0 1.0 9.0

T

=25oC -40 t o 85oC

A

Min. Typ. Max. Min. Max.

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Co n ditions Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

10.5 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculatedfromtheoperatingcurrentconsumption withoutload.(Referto
TestCircuit).Average operatingcurrent canbeobtained bythefollowingequation.I

(opr)= CPD• VCC•fIN+I

CC

CC

pF

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