SGS Thomson Microelectronics 74V1GU04 Datasheet

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74V1GU04

SINGLE INVERTER(SINGLE STAGE)

■ HIGHSPEED:t

■ LOW POWERDISSIPAT ION:

=1 µA (MAX.) at TA=25oC

I

CC

■ HIGHNOISEIMMUNITY:

V

NIH=VNIL

■ POWERDOWN PROTECTIONON INPUT

■ SYMMETRICALOUTPUT IMPEDANCE:

|=IOL=8 mA(MIN)

|I

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto 5.5V

CC

■ IMPROVEDLATCH-UPIMMUNITY

=10%VCC(MIN.)

PHL

=3.5ns (TYP.)atVCC=5V

PD

DESCRIPTION

The 74V1GU04 is an advanced high-speed
CMOS SINGLE INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

S

(SOT23-5L)

C

(SC-70)

ORDERCODE:

74V1GU04S 74V1GU04C

As the internal circuit is composed of a single
stage inverter, it can be used in analog
applicationsuch a crystaloscillator.

Power down protection is provided on input and
0 to 7V can be accepted on input with no regard
to the supply voltage. This device can be used to
interface5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

October 1999

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74V1GU04

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

20 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

2/7

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

CC

V

o

C

74V1GU04

DC SPECIFICATIONS

Symb o l Para met er Test Co n ditions Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

2.0 1.7 1.7

3.0 to 5.5 0.8V

2.0 0.3 0.3

3.0 to 5.5 0.2V

2.0 IO=-50 µA 1.8 2.0 1.8

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.7 3.0 2.7

O

=-50µA 4.0 4.5 4.0

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µA 0.0 0.2 0.2

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.3 0.3

O

=50µA 0.0 0.5 0.5

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 1 10 µA

Min. Typ. Max. Min. Max.

Current

=25oC -40 t o 85oC

A

CC

0.8V

CC

CC

0.2V

CC

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)

Symbol Parameter Test Conditi on Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*) Voltagerange is3.3V± 0.3V
(**) Voltagerangeis5V±0.5V

V

3.3

3.3

5.0

5.0

CC

(V)

(**)
(**)

C

L

(pF)

(*)

15 5.0 8.9 1.0 10.5

(*)

50 7.5 11.4 1.0 13.0

T

=25oC -40 t o 85oC

A

Min. Typ. Max. Min. Max.

15 3.5 5.5 1.0 6.5
50 5.0 7.0 1.0 8.0

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Co n ditions Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 5 10 10

C

IN

Power Dissipation

C

PD

9pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+I

CC

CC

pF

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