SGS Thomson Microelectronics 74V1G70 Datasheet



74V1G70

SINGLE BUFFER

■ HIGHSPEED:t

■

LOW POWERDISSIPAT ION:
I

=1 µA (MAX.) at TA=25oC

CC

■

HIGHNOISEIMMUNITY:
V

NIH=VNIL

■ POWERDOWN PROTECTIONON INPUTS

■

SYMMETRICALOUTPUT IMPEDANCE:
|I

|=IOL=8 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

(OPR)= 2Vto 5.5V

V

CC

■ IMPROVEDLATCH-UPIMMUNITY

=28%VCC(MIN.)

PHL

=4.3ns (TYP.)atVCC=5V

PD

DESCRIPTION

The 74V1G70is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layermetal wiring C

2

MOS

technology.

S

(SOT23-5L)

C

(SC-70)

ORDERCODE:

74V1G70S 74V1G70C

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

October 1999

1/7

74V1G70

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LL

HH

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current
DC Output Current ± 25 mA

O

DC VCCor Ground Current ± 50 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

20 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom30%to70%ofV

2/7

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC
CC

=3.3±0.3V)
=5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

CC

0 to 100

0to20

V

o

C

ns/V
ns/V

74V1G70

DC SPECIFICATIONS

Symb o l Para met er Test Co n ditions Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

I

Quiescent Supply

I

CC

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µA 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

5.5 VI=VCCorGND 1 10 µA

Min. Typ. Max. Min. Max.

Current

=25oC -40 t o 85oC

A

CC

0.7V

CC

CC

0.3V

CC

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)

Symbol Parameter Test Conditi on Value Unit

t

Propagation Delay

PLH

t

Time

PHL

(*) Voltagerange is3.3V± 0.3V
(**) Voltagerangeis5V±0.5V

V

3.3

3.3

5.0

5.0

CC

(V)

(**)
(**)

C

L

(pF)

(*)

15 3.9 5.6 1.0 6.8

(*)

50 5.7 8.0 1.0 9.2

T

=25oC -40 t o 85oC

A

Min. Typ. Max. Min. Max.

15 3.1 4.1 1.0 4.9
50 4.3 5.6 1.0 6.4

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test Co n ditions Val u e Uni t

=25oC -40 t o 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

11 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+I

CC

CC

pF

3/7