SGS Thomson Microelectronics 74V1G66STR, 74V1G66CTR Datasheet

74V1G6 6

SINGLE BILATERAL SWITCH

■ HIGH SPEED:

t

= 0.3ns (TYP.) at VCC = 5V

PD

t

= 0.4ns (TYP.) at VCC = 3.3V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ LOW "ON" RESISTANCE:

=6.5Ω (T Y P.) AT VCC = 5V I

R

ON

R

= 8.5Ω (TYP.) AT VCC = 3.3V I

ON

■ SINE WAVE DISTOR TION:

0.04% AT V

■ WIDE OPERATING RANGE:

V

(OPR) = 2V TO 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

= 3.3V f = 1KHz

CC

= 1mA

I/O

= 1mA

DESCRIPTION

The 74V1G66 is an advanced high-speed CM OS SINGLE BILATERAL SWITCH fabricated in silicon gate C

2

MOS technology. It achie ves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signals th at may vary across the full power s upply range (from GND to V

)

CC

The C input is provided to control the switch and it’s compatible with standard CMOS output; the

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1G66STR

SOT323-5L 74V1G66CTR

switch is ON (port I/O is connected to Port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many application as Battery Powered System, Test Equipment. It’s available in the commercial and extended temperature range in SOT23-5L and SC-70-5L package. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/11July 2001

74V1G66

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 I/O Independent Input/Output 2 O/I Independent Output/Input

4C 3 GND Ground (0V)

5

V

CC

TRUTH TABLE

CONTROL SWITCH FUNCTION

HON

L OFF *

* : High Impedance S tate

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I I

I

OK

I

or I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Control Input Voltage

IC

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Control Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Enable Input (Active HIGH)

Positive Supply Voltage

-0.5 to +7.0 V V

± 20 mA

- 20 mA

± 20 mA ± 50 mA ± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

dt/dv

1) VIN from 30 % to 70% of VCC on control pi n

2/11

Supply Voltage

CC

Input Voltage 0 to V

I

Control Input Voltage

IC

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) V

CC

= 5.0V

2 to 5.5 V

CC

0 to 5.5 V

CC

-55 to 125 °C 0 to 20 ns/V

V

DC SPECIFICATIONS

Symbol Parameter

V

R

I

(*) Vol tage range is 3. 3V ± 0.3V (**) Voltage range is 5V ± 0.5V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

ON Resistance

ON

ON Resistance

ON

Input/Output

OFF

Leakage Current (SWITCH OFF)

I

Switch Input

IZ

Leakage Current (SWITCH ON, OUTPUT OPEN)

I

Control Input

IN

Leakage Current Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

2.7 to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

2.7 to

5.5

(*)

3.3

(**)

5.0

(*)

3.3

(**)

5.0

VIC = VIH

V

= VCC to GND

I/O

I

≤ 1mA

I/O

VIC = VIH

V

= VCC or GND

I/O

I

≤ 1mA

I/O

0.3V

CC

0.3V

CC

12.5 19 23 27

7.5 10 12 14

8.5 10.5 12.5 15

6.5 8.5 10 12

VOS = VCC to GND

V

5.5

0 to

5.5

= VCC to GND

IS

V

= V

IC

= VCC to GND

V

OS

V

= V

IC

V

= 5.5V or GND

IC

= VCC or GND

V

I

IL

IH

±0.1 ± 1 ± 5 µA

± 0.1 ± 1.0 ± 1.0 µA

11020µA

74V1G66

Unit

0.3V

CC

V

Ω

AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 3ns)

Test Condition Value

= 25°C

Symbol Parameter

t

t t

(*) Vol tage range is 3. 3V ± 0.3V (**) Voltage range is 5.0V ±

PD

PLZ PHZ

PZL PZH

Delay Time

Output Disable Time

Output Enable Time

0.5V

V

3.3

5.0

3.3

5.0

3.3

5.0

(V)

CC

(*)

(**)

(*)

(**)

(*)

(**)

tr = tf = 6ns

RL = 500 Ω

RL = 1 KΩ

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.4 0.8 1.2 2.4

0.3 0.6 1.0 2.0

5.0 7.5 9.0 10.0

2.5 4.0 5.0 7.0

2.0 4.0 5.0 7.0

-40 to 85°C -55 to 125°C

Unit

ns

3/11

74V1G66

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

C

1) CPD is de fined as the value of the IC’s i n t ernal equi v alent capa c itance which is calculated from the op erating current co nsumption without

load. (Refer to Test Circuit). A verage operating current can be obtained by the followi ng equati on. I

Input Capacitance

IN

Output

I/O

Capacitance Power Dissipation

PD

Capacitance (note 1)

3.3 2.5

5.0 3

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

310 10 10pF

10 pF

ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C)

Test Condition Value

Symbol Parameter

Sine Wave Distortion (THD)

f

MAX

Frequency Response (Switch ON)

Feed through Attenuation (Switch OFF)

Crosstalk (Control Input to Signal Output)

(*)Voltage range is 3.3V ± 0. 3V (**) Volta ge range is 5.0V ±

0.5V

V

3.3

5.0

3.3

5.0

3.3

5.0

3.3

5.0

(V)

V

IN

CC

(V

)

p-p

(*)

2.75

(**)

4 0.04

(*)

(**)

(*)

(**)

(*)

(**)

Adjust fIN voltage to obtain 0 dBm at VOS.

Increase f

Adjust f

R

= 600Ω, CL = 50 pF, fIN = 1KHz sine wave

L

RL = 600Ω, CL = 50 pF, fIN = 1KHz square wave

= 1 KHz RL = 10 KΩ, CL = 50 pF

f

IN

Frequency until dB meter reads -3dB

IN

R

= 50Ω, CL = 10 pF

L

V

is centered at VCC/2

IN

Voltage to obtained 0dBm at VIS

IN

t

= tf = 6ns

r

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + I

CC(opr)

CC

Typ.

0.04

150 180

-60

60 60

Unit

pF

Unit

%

MHz

dB

mV

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