SGS Thomson Microelectronics 74V1G14 Datasheet

74V1G14
SINGLE SCHMITT INVERTER
HIGHSPEED:t
=1 µA (MAX.) at TA=25oC
I
CC
TYPICALHYSTERESIS:V
POWERDOWNPROTECTIONON INPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=8 mA(MIN)
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
PHL
OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto 5.5V
CC
IMPROVEDLATCH-UP IMMUNITY
=5.5ns (TYP.)atVCC=5V
PD
=1VATVCC=4.5V
h
DESCRIPTION
The 74V1G14 is an advancedhigh-speed CMOS SINGLE SCHMITT INVERTER fabricated with sub-micron silicon gate and double-layer metal wiringC
2
MOStechnology.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunityand stable output.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no
S
(SOT23-5L)
C
(SC-70)
ORDERCODE:
74V1G14S 74V1G14C
regard to the supply voltage. This device can be used to interface 5V to 3V.
Pin configuration and function are the same as those of the V1G04 but the V1G14 has hysteresis.
This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fallinput signals.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
1/7
74V1G14
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FUNCTI O N
1 N.C. Not Connected 2 1A Data Input 4 1Y Data Output 3 GND Ground (0V) 5V
CC
Positive Supply Voltage
TRUTH TABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functionaloperationunder thesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current DC Output Current ± 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
20 mA
±
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
2/7
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
CC
V
o
C
74V1G14
DC SPECIFICATIONS
Symb o l Para met er Test Condi ti o ns Val u e Uni t
T
V
CC
High Level Input
V
t+
Voltage
(V)
3.0 2.2 2.2
4.5 3.15 3.15
Min. Typ. Max. Min. Max.
5.5 3.85 3.85
Low Level Input
V
t-
Voltage
3.0 0.9 0.9
4.5 1.35 1.35
5.5 1.65 1.65
Hysteresis Voltage 3.0 0.3 1.2 0.3 1.2
V
h
4.5 0.4 1.4 0.4 1.4
5.5 0.5 1.6 0.5 1.6
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current 0 to 5.5 VI= 5.5V or GND
I
I
Quiescent Supply
I
CC
2.0 IO=-50µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50 µA 2.9 3.0 2.9
O
=-50 µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50 µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
5.5 VI=VCCorGND 1 10
Current
=25oC -40 to 85oC
A
0.1
±
1.0
±
µ µ
V
V
V
V
V
A A
AC ELECTRICAL CHARACTERISTICS
(Inputt
r=tf
=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
(*) Voltagerangeis 3.3V± 0.3V (**) Voltagerange is 5V± 0.5V
V
3.3
3.3
5.0
5.0
CC
(V)
(**) (**)
C
L
(pF)
(*)
15 8.3 12.5 1.0 15.0
(*)
50 10.8 16.0 1.0 18.5
T
=25oC -40 to 85oC
A
Min. Typ. Max. Min. Max.
15 5.5 8.6 1.0 10.0 50 7.0 10.5 1.0 12.0
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Condi ti o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
Power Dissipation
C
PD
21 pF
Capacitance (note 1)
1)CPDisdefinedasthevalueoftheIC’sinternal equivalent capacitance whichiscalculated fromtheoperatingcurrentconsumptionwithout load.(Referto TestCircuit).Averageoperatingcurrent canbe obtainedbythefollowingequation.I
(opr)= C
CC
V
PD
f
CC
IN+ICC
pF
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