SGS Thomson Microelectronics 74V1G126 Datasheet

SINGLE BUS BUFFER (3-STATE)
HIGHSPEED:t
LOW POWER DISSIPATION:
=1 µA (MAX.)at TA=25oC
I
CC
HIGHNOISEIMMUNITY:
V
NIH=VNIL
POWERDOWNPROTECTIONON INPUTS
SYMMETRICALOUTPUTIMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
BALANCEDPROPAGATIONDELAYS:
t
t
PLH
OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto5.5V
CC
IMPROVEDLATCH-UPIMMUNITY
=28%VCC(MIN.)
PHL
DESCRIPTION
The 74V1G125 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiringC
2
MOStechnology.
=3.8ns(TYP.)atVCC=5V
PD
74V1G126
PRELIMINARY DATA
S
(SOT23-5L)
ORDERCODE:
74V1G126S 74V1G126C
3-STATE control input G has to be set LOW to place the output into thehigh impedance state.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
C
(SC-70)
PIN CONNECTION AND IEC LOGICSYMBOLS
October 1999
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74V1G126
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1 1G Output Enable Input 2 1A Data Input 4 1Y Data Output 3 GND Ground (0V) 5V
CC
Positive Supply Voltage
TRUTH TABLE
AGY
XLZ
LHL
HHH
X:”H” or”L” Z:HighImpedance
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
25 mA
±
50 mA
±
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
2/8
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC CC
=3.3±0.3V) =5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V ns/V
74V1G126
DC SPECIFICATIONS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
V
CC
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
High Impedance
I
OZ
Output Leakage
(V)
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µ A 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
VI=VIHor V
5.5
VO=VCCor GND
Min. Typ. Max. Min. Max.
IL
Current Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 1 10
Current
=25oC -40 to 85oC
A
CC
0.7V
CC
±0.25 ±2.5 µA
CC
0.3V
CC
µ
V
V
V
V
A
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)
Symbol Parameter Test Condition Value Unit
t
Propagation Delay
PLH
t
Time
PHL
t
Output Disable Time 3.3
PLZ
t
PHZ
t
Output Enable Time 3.3
PZL
t
PZH
(*) Voltagerangeis 3.3V± 0.3V (**) Voltagerangeis 5V± 0.5V
V
3.3
3.3
5.0
5.0
3.3
5.0
5.0
3.3
5.0
5.0
CC
(V)
(**) (**)
(**) (**)
(**) (**)
CL
(pF)
(*) (*)
15 5.6 8.0 1.0 9.5 50 8.1 11.5 1.0 13.0
Min. Typ. Max. Min. Max.
15 3.8 5.5 1.0 6.5 50 5.3 7.5 1.0 8.5
(*) (*)
15 50 9.5 13.2 1.0 15.0
RL=1K
15 4.6 6.8 1.0 8.0 50 6.1 8.8 1.0 10.0
(*) (*)
15 50 7.9 11.5 1.0 13.0
RL=1K
15 3.6 5.1 1.0 6.0 50 5.1 7.1 1.0 8.0
=25oC -40 to 85oC
T
A
7.0 9.7 1.0 11.5
5.4 8.0 1.0 9.5
ns
ns
ns
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