SGS Thomson Microelectronics 74V1G126 Datasheet



SINGLE BUS BUFFER (3-STATE)

■ HIGHSPEED:t

■ LOW POWER DISSIPATION:

=1 µA (MAX.)at TA=25oC

I

CC

■ HIGHNOISEIMMUNITY:

V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUTS

■ SYMMETRICALOUTPUTIMPEDANCE:

|=IOL=8 mA(MIN)

|I

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto5.5V

CC

■ IMPROVEDLATCH-UPIMMUNITY

=28%VCC(MIN.)

PHL

DESCRIPTION

The 74V1G125 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiringC

2

MOStechnology.

=3.8ns(TYP.)atVCC=5V

PD

74V1G126

PRELIMINARY DATA

S

(SOT23-5L)

ORDERCODE:

74V1G126S 74V1G126C

3-STATE control input G has to be set LOW to place the output into thehigh impedance state.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

C

(SC-70)

PIN CONNECTION AND IEC LOGICSYMBOLS

October 1999

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74V1G126

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND F U NCTIO N

1 1G Output Enable Input 2 1A Data Input 4 1Y Data Output 3 GND Ground (0V) 5V

CC

Positive Supply Voltage

TRUTH TABLE

AGY

XLZ

LHL

HHH

X:”H” or”L” Z:HighImpedance

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

25 mA

±

50 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

dt/dv

1)VINfrom30%to70%of V

2/8

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC CC

=3.3±0.3V) =5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

0 to 100

0to20

V

o

C

ns/V ns/V

74V1G126

DC SPECIFICATIONS

Symb o l Para met er Test Co n diti o ns Val u e Uni t

T

V

CC

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

High Level Output

OH

Voltage

Low Level Output

V

OL

Voltage

High Impedance

I

OZ

Output Leakage

(V)

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=-50 µA 1.9 2.0 1.9

3.0 I

4.5 I

3.0 I

4.5 I

=-50µA 2.9 3.0 2.9

O

=-50µA 4.4 4.5 4.4

O

=-4 mA 2.58 2.48

O

=-8 mA 3.94 3.8

O

2.0 IO=50 µ A 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

VI=VIHor V

5.5

VO=VCCor GND

Min. Typ. Max. Min. Max.

IL

Current Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA

I

Quiescent Supply

I

CC

5.5 VI=VCCorGND 1 10

Current

=25oC -40 to 85oC

A

CC

0.7V

CC

±0.25 ±2.5 µA

CC

0.3V

CC

µ

V

A

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

t

Time

PHL

t

Output Disable Time 3.3

PLZ

t

PHZ

t

Output Enable Time 3.3

PZL

t

PZH

(*) Voltagerangeis 3.3V± 0.3V (**) Voltagerangeis 5V± 0.5V

V

3.3

5.0

3.3

5.0

3.3

5.0

CC

(V)

(**) (**)

CL

(pF)

(*) (*)

15 5.6 8.0 1.0 9.5 50 8.1 11.5 1.0 13.0

Min. Typ. Max. Min. Max.

15 3.8 5.5 1.0 6.5 50 5.3 7.5 1.0 8.5

(*) (*)

15 50 9.5 13.2 1.0 15.0

RL=1KΩ

15 4.6 6.8 1.0 8.0 50 6.1 8.8 1.0 10.0

(*) (*)

15 50 7.9 11.5 1.0 13.0

RL=1K

Ω

15 3.6 5.1 1.0 6.0 50 5.1 7.1 1.0 8.0

=25oC -40 to 85oC

T

A

7.0 9.7 1.0 11.5

5.4 8.0 1.0 9.5

ns

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