SGS Thomson Microelectronics 74V1G125 Datasheet
74V1G125
SINGLE BUS BUFFER (3-STATE)
■ HIGHSPEED:t
■ LOW POWERDISSIPAT ION:
=1 µA (MAX.) at TA=25oC
I
CC
■ HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWN PROTECTIONON INPUTS
■ SYMMETRICALOUTPUT IMPEDANCE:
|=IOL=8 mA(MIN)
|I
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 2Vto 5.5V
CC
■ IMPROVEDLATCH-UPIMMUNITY
=28%VCC(MIN.)
PHL
=3.8ns (TYP.)atVCC=5V
PD
DESCRIPTION
The 74V1G125 is an advanced high-speed
CMOS SINGLE BUS BUFFER fabricated with
sub-micron silicon gate and double-layer metal
wiringC
2
MOStechnology.
S
(SOT23-5L)
C
(SC-70)
ORDERCODE:
74V1G125S
3-STATE control input G has to be set high to
place the output into the highimpedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
1/8
74V1G125
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1 1G Output Enable Input
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V
CC
Positive Supply Voltage
TRUTH TABLE
A
XHZ
LLL
HLH
X:”H” or”L” Z:HighImpadance
G
Y
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functional operation underthese conditionisnot implied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
25 mA
±
50 mA
±
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%ofV
2/8
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V
ns/V
74V1G125
DC SPECIFICATIONS
Symb o l Para met er Test Co n ditions Val u e Uni t
T
V
CC
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level Output
OH
Voltage
Low Level Output
V
OL
Voltage
High Impedance
I
OZ
Output Leakage
(V)
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=-50 µA 1.9 2.0 1.9
3.0 I
4.5 I
3.0 I
4.5 I
=-50µA 2.9 3.0 2.9
O
=-50µA 4.4 4.5 4.4
O
=-4 mA 2.58 2.48
O
=-8 mA 3.94 3.8
O
2.0 IO=50 µA 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
VI=VIHor V
5.5
VO=VCCor GND
Min. Typ. Max. Min. Max.
IL
Current
Input Leakage Current 0 to 5.5 VI= 5.5V or GND ±0.1 ±1.0 µA
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 1 10
Current
=25oC -40 t o 85oC
A
CC
0.7V
CC
±0.25 ±2.5 µA
CC
0.3V
CC
µ
V
V
V
V
A
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3 ns)
Symbol Parameter Test Conditi on Value Unit
t
Propagation Delay
PLH
t
Time
PHL
t
Output Disable Time 3.3
PLZ
t
PHZ
t
Output Enable Time 3.3
PZL
t
PZH
(*) Voltagerange is3.3V± 0.3V
(**) Voltagerangeis5V±0.5V
V
3.3
3.3
5.0
5.0
3.3
5.0
5.0
5.0
CC
(V)
(**)
(**)
(**)
(**)
(**)
C
L
(pF)
(*)
15 5.6 8.0 1.0 9.5
(*)
50 8.1 11.5 1.0 13.0
Min. Typ. Max. Min. Max.
15 3.8 5.5 1.0 6.5
50 5.3 7.5 1.0 8.5
(*)
15
(*)
50 7.9 11.5 1.0 13.0
RL=1KΩ
15 3.6 5.0 1.0 6.0
50 5.1 7.0 1.0 8.0
(*)
50
50 6.1 8.5 1.0 10.0
R
L
=1KΩ
=25oC -40 t o 85oC
T
A
5.4 8.0 1.0 9.5
9.5 13.0 1.0 15.0
ns
ns
ns
3/8
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