SGS Thomson Microelectronics 74V1G07STR, 74V1G07CTR Datasheet

1/9April 2003

■ HIGH SPEED: t

PD

= 3.7ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

= 28% VCC(MIN.)

■ POWER DOWN PROTECTION ON INPUT

■ OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1G07 is an advanced high-speed CMOS
SINGLE BUFFER (OPEN DRAIN) fabricated with
sub-micron silicon gat e and double- layer metal
wiring C

2

MOS technology.

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.

Power down protection is provided on input and 0
to 7V can be accepted on input with no rega rd to
the supply voltage. This device can be used to
interface5Vto3V.

74V1G07

SINGLE BUFFER (OPEN DRAIN)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-5L 74V1G07STR

SOT323-5L 74V1G07CTR

SOT323-5LSOT23-5L

74V1G07

2/9

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

Z: HighImpedance

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

RECOMMENDED OPERATING CONDITIONS

1) VINfrom30% to 70% of V

CC

PIN No SYMBOL NAME AND FUNCTION

1 NC Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5

V

CC

Positive Supply Voltage

AY

LL

HZ

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time (note 1) (V

CC

=3.3±0.3V)

(V

CC

= 5.0 ± 0.5V)

0 to 100

0to20

ns/V
ns/V

74V1G07

3/9

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

2.0 1.5 1.5 1.5
V

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

V

IL

Low Level Input
Voltage

2.0 0.5 0.5 0.5
V

3.0to

5.5

0.3V

CC

0.3V

CC

0.3V

CC

V

OL

Low Level Output
Voltage

2.0

IO=50 µA

0.0 0.1 0.1 0.1

V

3.0

I

O

=50 µA

0.0 0.1 0.1 0.1

4.5

I

O

=50 µA

0.0 0.1 0.1 0.1

3.0

I

O

=4 mA

0.36 0.44 0.55

4.5

I

O

=8 mA

0.36 0.44 0.55

I

OZ

High Impedance
Output Leakage
Current

5.5

V

I=VIH

or V

IL

VO=VCCor GND

±

0.25

± 2.5 ± 5 µA

I

I

Input Leakage
Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply
Current

5.5

V

I=VCC

or GND

11020µA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PZL

Propagation Delay
Time

3.3

(*)

15 1.0 4.8 7.7 1.0 9.0 1.0 10.0

ns

3.3

(*)

50 1.0 5.3 8.5 1.0 10.0 1.0 11.0

5.0

(**)

15 1.0 3.7 5.5 1.0 6.5 1.0 7.5

5.0

(**)

50 1.0 4.2 7.5 1.0 8.5 1.0 9.5

t

PLZ

Propagation Delay
Time

3.3

(*)

50 1.0 7.5 10.5 1.0 11.5 1.0 12.5

ns

5.0

(**)

50 1.0 4.7 7.5 1.0 8.5 1.0 9.5