SGS Thomson Microelectronics 74V1G07 Datasheet



■ HIGHSPEED:t

■

LOW POWER DISSIPATION:
I

=1 µA (MAX.)at TA=25oC

CC

■

HIGHNOISEIMMUNITY:
V

NIH=VNIL

■ POWERDOWNPROTECTIONON INPUT

■

OPERATINGVOLTAGERANGE:
V

CC

■ IMPROVEDLATCH-UPIMMUNITY

=28%VCC(MIN.)

(OPR)= 2Vto5.5V

=6.1ns(TYP.)atVCC=5V

PD

74V1G07

SINGLE BUFFER (OPEN DRAIN)

PRELIMINARY DATA

S

(SOT23-5L)

ORDERCODE:

74V1G07S 74V1G07C

C

(SC-70)

DESCRIPTION

The 74V1G07 is an advancedhigh-speed CMOS
SINGLE BUFFER (OPEN DRAIN) fabricated with
sub-micron silicon gate and double-layer metal
wiringC

2

MOStechnology.

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunityand stableoutput.

PIN CONNECTION AND IEC LOGIC SYMBOLS

Power down protection is provided on input and 0
to 7V can be accepted on inputwith no regard to
the supply voltage. This device can be used to
interface5V to 3V.

October 1999

1/7

74V1G07

INPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTIO N

1 N.C. Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LL

HZ

Z = High impedance

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.

Supply Voltage -0.5 to +7.0 V

CC

DC Input Voltage -0.5 to +7.0 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current - 20 mA

IK

DC Output Diode Current ± 20 mA
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 260

L

25 mA

±

50 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

dt/dv

1)VINfrom30%to70%of V

2/7

Supply Voltage 2.0 to 5.5 V

CC

Input Voltage 0 to 5.5 V

I

Output Voltage 0 to V

O

Operating Temperature -40 to +85

op

(V

CC
CC

=3.3±0.3V)
=5.0±0.5V)

Input Rise and Fall Time (see note 1) (V

CC

CC

0 to 100

0to20

V

o

C

ns/V
ns/V

74V1G07

DC SPECIFICATIONS

Symb o l Para met er Test C o n dit io ns Val u e Uni t

T

V

CC

(V)

High Level Input

V

IH

Voltage

V

Low Level Input

IL

Voltage

V

Low Level Output

OL

Voltage

2.0 1.5 1.5

3.0 to 5.5 0.7V

2.0 0.5 0.5

3.0 to 5.5 0.3V

2.0 IO=50 µ A 0.0 0.1 0.1

3.0 I

4.5 I

3.0 I

4.5 I

High Impedance

I

OZ

Output Leakage

5.5

VO=VCCor GND

Current
Input Leakage Current 0 to 5.5 VI= 5.5V or GND

I

I

Quiescent Supply

I

CC

5.5 VI=VCCorGND 1 10

Current

Min. Typ. Max. Min. Max.

=50µA 0.0 0.1 0.1

O

=50µA 0.0 0.1 0.1

O

=4 mA 0.36 0.44

O

=8 mA 0.36 0.44

O

VI=VIHor V

IL

=25oC -40 to 85oC

A

CC

0.7V

CC

±0.25 ±2.5 µA

0.1

±

CC

0.3V

±

1.0

CC

µ
µ

V

V

V

A
A

AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3 ns)

Symbol Parameter Test Condition Value Unit

t

Propagation Delay

PLH

Time

t

PHL

(*) Voltagerangeis 3.3V± 0.3V
(**) Voltagerangeis 5V± 0.5V

V

3.3

3.3

5.0

5.0

CC

(V)

(**)
(**)

C

L

(pF)

(*)

15 7.0 9.7 1.0 11.5

(*)

50 9.5 13.2 1.0 15.0

Min. Typ. Max. Min. Max.

=25oC -40 to 85oC

T

A

15 4.6 6.8 1.0 8.0
50 6.1 8.8 1.0 10.0

ns

CAPACITIVE CHARACTERISTICS

Symb o l Para met er Test C o n dit io ns Val u e Uni t

=25oC -40 to 85oC

T

A

Min. Typ. Max. Min. Max.

Input Capacitance 4 10 10

C

IN

Power Dissipation

C

PD

11 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+I

CC

CC

pF

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