SGS Thomson Microelectronics 74LX1G86STR, 74LX1G86CTR Datasheet

■ 5V TOLERANT INPUTS

■ HIGH SPEED:t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.)atTA=25°C

CC

■ POWER DOWN PROTECTION ON INPUTS

= 5ns (MAX.) at VCC=3V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL= 24mA (MIN) at VCC=3V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 1.65V to 5.5V

CC

(1.2V Data Retention)

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74LX1G86 is a low voltage C MOS SINGLE EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology.

74LX1G86

SINGLE EXCLUSIVE OR GATE

SOT323-5LSOT23-5L

ORDER CODES

PACKAGE T & R

SOT23-5L 74LX1G86STR

SOT323-5L 74LX1G86CTR

Power down protection is provided on all inputs and 0 to 7V can be accepted on inp uts with no regard to the supply voltage. This device can be usedto interface5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/11October 2002

74LX1G86

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION TRUTH TABLE

PIN No SYMBOL NAME AND FUNCTION

1 1A Data Input 2 1B Data Input 4 1Y Data Output 3 GND Ground (0V) 5

V

CC

Positive Supply Voltage

ABY

LLL

LHH HLH HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V V V

I

OK

I

or I

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

absolute maximum rating must be observed

1) I

O

2) V

<GND

O

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (VCC= 0V)

O

DC Output Voltage (High or Low State) (note 1) -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current (note 2) DC Output Current

O

DC VCCor Ground Current per Supply Pin

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V V

-50 mA

± 50 mA ± 50 mA

-65 to +150 °C

300 °C

2/11

74LX1G86

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V V V

I

OH,IOL

I

OH,IOL

I

OH,IOL

I

OH,IOL

I

OH,IOL

T

dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V

1) Truth Table guaranteed: 1.2V to 3.6V from0.8V to 2V atVCC=3.0V

2) V

IN

DC SPECIFICATIONS

Supply Voltage (note 1)

CC

Input Voltage

I

Output Voltage (VCC= 0V)

O

Output Voltage (High or Low State) 0 to V

O

High or Low Level Output Current (VCC= 4.5 to 5.5V) High or Low Level Output Current (VCC= 3.0 to 3.6V) High or Low Level Output Current (VCC= 2.7 to 3.0V) High or Low Level Output Current (VCC= 2.3 to 2.7V) High or Low Level Output Current (VCC= 1.65 to 2.3V) Operating Temperqture

op

Test Condition Value

1.65 to 5.5 V 0 to 5.5 V 0 to 5.5 V

CC

± 32 mA ± 24 mA ± 12 mA

± 8mA ± 4mA

-55 to 125 °C

V

Symbol Parameter

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

Current Power Off Leakage

I

off

Current Quiescent Supply

I

CC

Current

V

CC

(V)

1.65 to 1.95

3.0 to 5.5

1.65 to 1.95

3.0 to 5.5

1.65 to 3.6

1.65

2.3

2.7

3.0

4.5

1.65 to 3.6

1.65

2.3

2.7

3.0

4.5

1.65 to 5.5

0

1.65 to 5.5

3.6

-40 to 85 °C -55 to 125 °C

Min. Max. Min. Max.

0.75V

CC

0.7V

CC

0.7V

CC

0.25V

CC

0.3V

CC

0.3V

CC

IO=-100 µAVCC-0.1 VCC-0.1

=-4 mA

I

O

=-8 mA

I

O

=-12 mA

I

O

I

=-18 mA

O

=-24 mA

I

O

=-32 mA

I

O

IO=100 µA

I

=4 mA

O

=8 mA

I

O

=12 mA

I

O

=24 mA

I

O

=32 mA

I

O

= 0 to 5.5V

V

I

or VO= 5.5V

V

I

VI=VCCor GND

or VO= 3.6 to 5.5V

V

I

1.2 1.2

1.9 1.9

2.2 2.2

2.4 2.4

2.2 2.2

3.8 3.8

0.1 0.1

0.45 0.45

0.3 0.3

0.4 0.4

0.55 0.55

0.55 0.55 ± 10 ± 10 µA

10 10 µA 10 10

± 10 ± 10

0.75V

0.7V

CC CC

CC

0.25V

0.3V

CC CC

Unit

V2.3 to 2.7

CC

V2.3 to 2.7

V

µA

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74LX1G86

AC ELECTRICAL CHARACTERISTICS

Test Condition Value

Symbol Parameter

t

PLHtPHL

Propagation Delay Time

V

(V)

CC

C

(pF)

R

L

(Ω)

= t

t

L

s

(ns)

1.65 to 1.95

2.3 to 2.7 2.0 5.0 2.0 5.0

3.0 to 3.6 1.0 4.8 1.0 4.8

15 1M 3.0

4.5 to 5.5 1.0 3.6 1.0 3.6

-40 to 85 °C -55 to 125 °C

r

Min. Max. Min. Max.

2.0 9.0 2.0 9.0

Unit

ns

1.65 to 1.95 30 1000 2.0 2 9.9 2 9.9

2.3 to 2.7 30 500 2.0 2 5.5 2 5.5

2.7 50 500 2.5 1 5.2 1 5.2

3.0 to 3.6 50 500 2.5 1 5 1 5

4.5 to 5.5 50 500 2.5 1 4 1 4

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

(V)

CC

Min. Typ. Max.

C

Input Capacitance

IN

Power Dissipation Capacitance

PD

(note 1)

04pF

1.8 fIN= 10MHz 21

3.3 26

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

=25°C

A

Unit

pF2.5 24

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