SGS Thomson Microelectronics 74LX1G04STR, 74LX1G04CTR Datasheet

1/10September 2003
5V TOLERANT INPUTS
HIGH SPEED: t
PD
= 4.7ns (MAX.) at VCC=3V
I
CC
=1µA(MAX.)atTA=25°C
POWER DOWN P ROT ECTION ON I NP UTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL= 24m A (MIN) at VCC=3V
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING V OLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
LATCH-UP PE RFORMANCE EXCEED
300mA
DESCRIPTION
The 74LX1G04 is a low voltage CMOS SINGLE INVERTER fabricated with sub-mi cron silic on gate and double-layer metal wiring C
2
MOS tecnology. It is ideal for 1.65 to 5.5 V
CC
operations and low power and low noise a pplications. The i nterna l circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on input and output and 0 to 7V c an be accepted
on input with no regard to the supply voltage. T his device can be used to interface 5V to 3V or lower power supply system. The sub-m icron CMOS technology used allow low power consumption and guarantee optimized operation bet ween 2.8V and 1.8V system, as Smart P hone, Digital Still Camera, PDA, Notebook, or each battery powered equipment. All input and outputs are equipped with protection circuits against ESD discharge.
74LX1G04
LOW VOLTAGE CMOS SINGLE INVERTER
WITH 5V TOLERANT INPUT
PIN CONNECTION AND IEC LOGIC SYMBOLS (top view)
ORDER CODES
PACKAGE T & R
SOT23-5L 74LX1G04STR
SOT323-5L 74LX1G04CTR
SOT323-5LSOT23-5L
74LX1G04
2/10
INPUT AND OUTPUT E QUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH T ABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition isnot implied
1) I
O
absolute maximum rating must be observed
2) V
O
<GND
PIN N° SYMBOL NAME AND FUNCTION
1 N.C. Not connected 2 1A Data Inputs 4 1Y Data Outputs 3 GND Ground (0V) 5
V
CC
Positive Supply Voltage
AY
LH
HL
Symbol Parameter² Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (VCC= 0V)
-0.5 to +7.0 V
V
O
DC Output Voltage (High or Low State) (note 1) -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-50 mA
I
OK
DC Output Diode Current (note 2)
-50 mA
I
O
DC Output Current
± 50 mA
I
CC
or I
GND
DC VCCor Ground Current per Supply Pin
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
74LX1G04
3/10
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.2V to 5.5V
2) V
IN
from0.8V to 2Vat VCC=3.0V
DC S PEC IFICATION
Symbol Parameter Value Unit
V
CC
Supply Voltage (note 1)
1.65 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (VCC= 0V)
0 to 5.5 V
V
O
Output Voltage (High or Low State) 0 to V
CC
V
I
OH,IOL
High or Low Level Output Current (VCC= 4.5 to 5.5V)
± 32 mA
I
OH,IOL
High or Low Level Output Current (VCC= 3.0 to 3.6V)
± 24 mA
I
OH,IOL
High or Low Level Output Current (VCC= 2.7 to 3.0V)
± 16 mA
I
OH,IOL
High or Low Level Output Current (VCC= 2.3 to 2.7V)
± 8mA
I
OH,IOL
High or Low Level Output Current (VCC= 1.65 to 2.3V)
± 4mA
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 2)
(V
CC
= 3.0 to 5.5V)
0to10
ns/V
(V
CC
= 1.65 to 2.7V)
0to20
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
-40 to 85 °C -55 to 125 °C
Min. Max. Min. Max.
V
IH
High Level Input Voltage
1.65 to 1.95
0.75V
CC
0.75V
CC
V2.3 to 2.7
0.7V
CC
0.7V
CC
3.0 to 5.5
0.7V
CC
0.7V
CC
V
IL
Low Level Input Voltage
1.65 to 1.95
0.25V
CC
0.25V
CC
V2.3 to 2.7
0.3V
CC
0.3V
CC
3.0 to 5.5
0.3V
CC
0.3V
CC
V
OH
High Level Output Voltage
1.65 to 4.5
IO=-100 µAVCC-0.1 VCC-0.1
V
1.65
I
O
=-4 mA
1.2 1.2
2.3
I
O
=-8 mA
1.9 1.9
3.0
I
O
=-16 mA
2.4 2.4
I
O
=-24 mA
2.2 2.2
4.5
I
O
=-32 mA
3.8 3.8
V
OL
Low Level Output Voltage
1.65 to 4.5
IO=100 µA
0.1 0.1
V
1.65
I
O
=4 mA
0.45 0.45
2.3
I
O
=8 mA
0.3 0.3
3.0
I
O
=16 mA
0.4 0.4
I
O
=24 mA
0.55 0.55
4.5
I
O
=32 mA
0.55 0.55
I
I
Input Leakage Current
1.65 to 5.5
V
I
= 0 to 5.5V
± 5 ± 10 µA
I
off
Power Off Leakage Current
0
V
I
or VO= 5.5V
10 10 µA
I
CC
Quiescent Supply Current
1.65 to 5.5
V
I=VCC
or GND
10 10 µA
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