SGS Thomson Microelectronics 74LVX86M, 74LVX86TTR Datasheet
1/8July 2001
■ HIGH SPEED :
t
PD
= 5.8 ns (TYP.) at V
CC
= 3.3V
■ 5V TOLERANT INPUTS
■ INPUT VOLTAGE LEVEL :
V
IL
=0.8V , VIH=2V at VCC=3V
■ LOW POWER DISSIPATION:
I
CC
= 2 µA (MAX.) at TA=25°C
■ LOW NOISE:
V
OLP
= 0.3V (TYP.) at VCC = 3.3V
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 4mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 86
■ IMPROVED LATCH-UP IMMUNITY
■ POWER DOWN PROTECTION ON INPUTS
DESCRIPTION
The 74LVX86 is a low voltage CMOS QUAD
EXCLUSIVE OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power, battery operated and low noise 3.3V
applications.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption. All inputs
and outputs are eq uipped with protection circuits
against static discharge, giving them 2KV ESD
immunity and transient excess voltage.
74LVX86
LOW VOLTAGE CMOS QUAD EXCLUSIVE OR GATE
WITH 5V TOLERANT INPUTS
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVX86M 74LVX86MTR
TSSOP 74LVX86TTR
TSSOPSOP
74LVX86
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) Truth T abl e guarante ed: 1.2V to 3.6 V
2) V
IN
from 0.8V to 2.0V
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLL
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage (note 1)
2 to 3.6 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 2) (V
CC
= 3.3V)
0 to 100 ns/V
74LVX86
3/8
DC SPECIFICATIONS
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst c ase package .
2) Max number of outp ut s defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V3.0 2.0 2.0 2.0
3.6 2.4 2.4 2.4
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V3.0 0.8 0.8 0.8
3.6 0.8 0.8 0.8
V
OH
High Level Output
Voltage
2.0
IO=-50 µA
1.9 2.0 1.9 1.9
V3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
3.0
I
O
=-4 mA
2.58 2.48 2.4
V
OL
Low Level Output
Voltage
2.0
I
O
=50 µA
0.0 0.1 0.1 0.1
V3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
3.6
V
I
= 5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
3.6
V
I
= VCC or GND
22020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
3.3
C
L
= 50 pF
0.3 0.5
V
V
OLV
-0.5 -0.3
V
IHD
Dynamic High
Voltage Input (note
1, 3)
3.3 2
V
ILD
Dynamic Low
Voltage Input (note
1, 3)
3.3 0.8
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