SGS Thomson Microelectronics 74LVX244MTR, 74LVX244M, 74LVX244TTR Datasheet

1/9July 2001
HIGH SPEED:
t
PD
=4.5ns (TYP.) at VCC = 3.3V
POWER-DOWN PROTECTION ON INPUTS
INPUT VOLTAGE LEVEL:
V
IL
= 0.8V, VIH = 2V at VCC =3V
LOW POWER DISSIPATION:
I
CC
= 4 µA (MAX.) at TA=25°C
LOW NOISE:
V
OLP
= 0.5V (TYP.) at VCC =3.3V
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 4 mA (MIN) at VCC =3V
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOLTAGE R ANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 244
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74LVX244 is a low voltage CMOS OCTAL BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.
G
output enable governs four BUS BUFFERs Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. It combines high speed performance with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.
74LVX244
LOW VOLTAGE CMOS OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVX244M 74LVX244MTR
TSSOP 74LVX244TTR
TSSOPSOP
74LVX244
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
X :Don‘t Care Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
RECOMMENDED OPERATING CONDITIONS
1) Truth T abl e guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2.0V
PIN No SYMBOL NAME AND FUNCTION
11G
Output Enable Input 2, 4, 6, 8 1A1 to 1A4 Data Inputs 9, 7, 5, 3 2Y1 to 2Y4 Data Outputs
11, 13, 15, 172A1 to 2A4 Data Inputs
18, 16, 14, 121Y1
to 1Y4 Data Outputs
19 2G
Output Enable Input
10 GND Ground (0V) 20 V
CC
Positive Supply Voltage
INPUTS OUTPUT
G
An Yn
LLL LHH
HXZ
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage (note 1)
2 to 3.6 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 2) (V
CC
= 3V)
0 to 100 ns/V
74LVX244
3/9
DC SPECIFICATIONS
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst c ase package.
2) Max number of output s defined as (n). Dat a i nputs are driven 0V to 3.3V, (n -1) outputs switc hi ng and one out put at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
2.0 1.5 1.5 1.5 V3.0
2.0 2.0 2.0
3.6
2.4 2.4 2.4
V
IL
Low Level Input Voltage
2.0 0.5 0.5 0.5 V3.0 0.8 0.8 0.8
3.6 0.8 0.8 0.8
V
OH
High Level Output Voltage
2.0
IO=-50 µA
1.9 2.0 1.9 1.9 V3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
3.0
I
O
=-4 mA
2.58 2.48 2.4
V
OL
Low Level Output Voltage
2.0
I
O
=50 µA
0.0 0.1 0.1 0.1 V3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
I
OZ
High Impedance Output Leakage Current
3.6
V
I
= VIH or V
IL
VO = VCC or GND
±0.25 ± 2.5 ± 2.5 µA
I
I
Input Leakage Current
3.6
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply Current
3.6
V
I
= VCC or GND
44040µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
OLP
Dynamic Low Voltage Quiet Output (note 1, 2)
3.3
C
L
= 50 pF
0.5 0.8
V
V
OLV
-0.8 -0.5
V
IHD
Dynamic High Voltage Input (note 1, 3)
3.3 2.0
V
ILD
Dynamic Low Voltage Input (note 1, 3)
3.3 0.8
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