SGS Thomson Microelectronics 74LVX20TTR, 74LVX20MTR, 74LVX20M Datasheet

74LVX20

LOW VOLTAGE CMOS DUAL 4-INPUT NAND GATE

WITH 5V TOLERANT INPUTS

■ HIGH SPEED :

t

= 4.1ns (TYP.) at V

PD

■ 5V TOLERANT INPUTS

■ INPUT VOLTAGE LEVEL :

=0.8V , VIH=2V at VCC=3V

V

IL

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ LOW NOISE:

V

= 0.3V (TYP.) at VCC = 3.3V

OLP

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOL TAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

(OPR) = 2V to 3.6V (1.2V Data Retention)

CC

= 3.3V

74 SERIES 20

■ IMPROVED LATCH-UP IMMUNITY

■ POWER DOWN PROTECTION ON INPUTS

DESCRIPTION

The 74LVX20 is a low voltage CMOS DUAL
4-INPUT NAND GATE fabricated with sub-micron
silicon gate and double-layer metal wiring C

2

MOS
technology. It is ideal for low power, battery
operated and low noise 3.3V applications.

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74LVX20M 74LVX20MTR

TSSOP 74LVX20TTR

The internal circuit is composed of 3 stages
including buffer ou tput, which provides high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8July 2001

74LVX20

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 9 1A to 2A Data Inputs
2, 10 1B to 2B Data Inputs
3, 11 N.C. Not Connected
4, 12 1C to 2C Data Inputs
5, 13 1D to 2D Data Inputs

6, 8 1Y to 2Y Data Outputs

7 GND Ground (0V)

14

TRUTH TABLE

ABCDY

LXXXH
XLXXH
XXLXH
XXXLH
HHHHL

X : Don‘t Care

V

CC

Positive Supply Voltage

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) Truth T abl e guarante ed: 1.2V to 3.6 V

2) V

from 0.8V to 2.0V

IN

Supply Voltage (note 1)

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 2) (V

= 3.3V)

CC

2 to 3.6 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100 ns/V

V

2/8

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

3.6 2.4 2.4 2.4

2.0 0.5 0.5 0.5

3.6 0.8 0.8 0.8

2.0

3.0

2.0

3.0

3.6

3.6

IO=-50 µA
I

=-50 µA

O

I

=-4 mA

O

=50 µA

I

O

I

=50 µA

O

I

=4 mA

O

= 5V or GND

V

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

2.58 2.48 2.4

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

22020µA

74LVX20

Unit

V3.0 2.0 2.0 2.0

V3.0 0.8 0.8 0.8

V3.0

V3.0

DYNAMIC SWITCHING CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

V
V

V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2)
Dynamic High

IHD

Voltage Input (note

3.3

3.3 2
= 50 pF

C

L

1, 3)

V

Dynamic Low

ILD

Voltage Input (note

3.3 0.8

1, 3)

1) Worst c ase package .

2) Max number of outp ut s defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
(V

), f=1MHz.

IHD

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.5

-0.5 -0.3

ILD

Unit

V

), 0V to threshold

3/8