SGS Thomson Microelectronics 74LVX14M, 74LVX14TTR, 74LVX14MTR Datasheet
74LVX14
LOW VOLTAGE CMOS HEX SCHMITT INVERTER
WITH 5V TOLERANT INPUTS
■ HIGH SPEED :
t
= 6.8ns (TYP.) at V
PD
■ 5V TOLERANT INPUTS
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ TYPICAL HYSTERESIS : 1V at V
■ LOW NOISE:
V
= 0.3V (TYP.) at VCC = 3.3V
OLP
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOL TAGE RANGE:
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
PHL
(OPR) = 2V to 3.6V (1.2V Data Retention)
CC
= 3.3V
CC
= 3.3V
74 SERIES 14
■ IMPROVED LATCH-UP IMMUNITY
■ POWER DOWN PROTECTION ON INPUTS
DESCRIPTION
The 74LVX14 is a low voltage CMOS HEX
SCHMITT INVERTER fabri cated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology. It is ideal for low power, battery
operated and low noise 3.3V applications.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVX14M 74LVX14MTR
TSSOP 74LVX14TTR
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
Pin configuration and function are the same as
those of the 74LVX00 but the 74LVX14 has
hysteresis betwee n the positive and the negative
input threshold typically of 1V.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8July 2001
74LVX14
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
1) Truth T abl e guarante ed: 1.2V to 3.6 V
2/8
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
2 to 3.6 V
0 to 5.5 V
CC
-55 to 125 °C
V
DC SPECIFICATIONS
Symbol Parameter
V
High Level Input
t+
Threshold
Low Level Input
V
t-
Threshold
Hysteresis Voltage
V
H
V
V
I
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
74LVX14
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
3.0 2.2 2.2 2.2 V
3.0 0.9 0.9 0.9 V
3.0 0.3 1.2 0.3 1.2 0.3 1.2 V
2.0
3.0
2.0
3.0
3.6
3.6
IO=-50 µA
I
=-50 µA
O
I
=-4 mA
O
IO=50 µA
I
=50 µA
O
I
=4 mA
O
= 5V or GND
V
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
2.58 2.48 2.4
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
-40 to 85°C -55 to 125°C
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
22020µA
Unit
V3.0
V3.0
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
V
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
Dynamic High
IHD
Voltage Input (note
3.3
3.3 2.2
C
= 50 pF
L
1, 3)
V
Dynamic Low
ILD
Voltage Input (note
3.3 0.9
1, 3)
1) Worst c ase package .
2) Max number of outp ut s defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
(V
), f=1MHz.
IHD
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.5
-0.5 -0.3
ILD
Unit
V
), 0V to threshold
3/8
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