SGS Thomson Microelectronics 74LVX139TTR, 74LVX139MTR, 74LVX139M Datasheet

1/9July 2001
HIGH SPEED :
t
PD
= 6.0ns (TYP.) at V
CC
= 3.3V
INPUT VOLTAGE LEVEL :
V
IL
=0.8V , VIH=2V at VCC=3V
LOW POWER DISSIPATION:
I
CC
= 2 µA (MAX.) at TA=25°C
LOW NOISE:
V
OLP
= 0.3V (TYP.) at VCC = 3.3V
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
OPERATING VOL TAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 139
IMPROVED LATCH-UP IMMUNITY
POWER DOWN PROTECTION ON INPUTS
DESCRIPTION
The 74LVX139 is a low voltage CMOS DUAL 2 TO 4 DECODER/DEMULTIPLEXER fabricated with sub-micron silicon gate and double-layer metal wiring C
2
MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.
The active low enable input can be used for gating or as a data input for demultiplexing applications. While the enable input is held high, all four outputs are high independently of the other inputs. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V system. It combines high speed performance with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.
74LVX139
LOW VOLTAGE CMOS
DUAL 2 TO 4 DECODER/DEMULTIPLEXER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVX139M 74LVX139MTR
TSSOP 74LVX139TTR
TSSOPSOP
74LVX139
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
X : Don’t Care n: 1, 2.
LOGIC DIAGRAM
PIN No SYMBOL NAME AND FUNCTION
1, 15 1G
, 2G Enable Inputs
2, 3 1A, 1B Address Inputs
4, 5, 6, 7 1Y0
to 1Y3 Outputs
12, 11, 10, 9 2Y0
to 2Y3 Outputs
14, 13 2A, 2B Address Inputs
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
INPUTS
OUTPUTS
ENABLE SELECT
nG
nB nA nY0 nY1 nY2 nY3
HXXHHHH
LLLLHHH LLHHLHH LHLHHLH LHHHHHL
74LVX139
3/9
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
RECOMMENDED OPERATING CONDITIONS
1) Truth T abl e guarante ed: 1.2V to 3.6 V
2) V
IN
from 0.8V to 2.0V
DC SPECIFICATIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage (note 1)
2 to 3.6 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 2) (V
CC
= 3.3V)
0 to 100 ns/V
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input Voltage
2.0 1.5 1.5 1.5 V3.0 2.0 2.0 2.0
3.6 2.4 2.4 2.4
V
IL
Low Level Input Voltage
2.0 0.5 0.5 0.5 V3.0 0.8 0.8 0.8
3.6 0.8 0.8 0.8
V
OH
High Level Output Voltage
2.0
I
O
=-50 µA
1.9 2.0 1.9 1.9 V3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
3.0
I
O
=-4 mA
2.58 2.48 2.4
V
OL
Low Level Output Voltage
2.0
I
O
=50 µA
0.0 0.1 0.1 0.1 V3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
I
I
Input Leakage Current
3.6
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply Current
3.6
V
I
= VCC or GND
22020µA
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