SGS Thomson Microelectronics 74LVX132TTR, 74LVX132MTR, 74LVX132M Datasheet
1/8July 2001
■ HIGH SPEED :
t
PD
= 5.9ns (TYP.) at V
CC
= 3.3V
■ 5V TOLERANT INPUTS
■ LOW POWER DISSIPATION:
I
CC
= 2 µA (MAX.) at TA=25°C
■ TYPI C AL HYSTERESIS : 0.7V a t V
CC
= 3.3V
■ LOW NOISE:
V
OLP
= 0.3V (TYP.) at VCC = 3.3V
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 4mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOL TAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 132
■ IMPROVED LATCH-UP IMMUNITY
■ POWER DOWN PROTECTION ON INPUTS
DESCRIPTION
The 74LVX132 is a low voltage CMOS QUAD
2-INPUT SCHMITT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power, battery operated and low noise 3.3V
applications. Power down protection is provided
on all inputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
Pin configuration and function are the same as
those of the 74LVX00 but the 74LVX132 has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74LVX132
LOW VOLTAGE CMOS QUAD 2-INPUT SCHMITT NAND GATE
WITH 5V TOLERANT INPUTS
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVX132M 74LVX132MTR
TSSOP 74LVX132TTR
TSSOPSOP
74LVX132
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) Truth T abl e guaranteed: 1.2V to 3.6V
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage (note 1)
2 to 3.6 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
74LVX132
3/8
DC SPECIFICATIONS
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst c ase package.
2) Max number of output s defined as (n). Data inputs ar e driven 0V to 3.3 V, (n-1) outputs switching and one output at GND .
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
t+
High Level Input
Threshold
3.0 2.2 2.2 2.2 V
V
t-
Low Level Input
Threshold
3.0 0.9 0.9 0.9 V
V
H
Hysteresis Voltage
3.0 0.3 1.2 0.3 1.2 0.3 1.2 V
V
OH
High Level Output
Voltage
2.0
IO=-50 µA
1.9 2.0 1.9 1.9
V3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
3.0
I
O
=-4 mA
2.58 2.48 2.4
V
OL
Low Level Output
Voltage
2.0
IO=50 µA
0.0 0.1 0.1 0.1
V3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
3.6
V
I
= 5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
3.6
V
I
= VCC or GND
22020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
3.3
C
L
= 50 pF
0.3 0.5
V
V
OLV
-0.5 -0.3
V
IHD
Dynamic High
Voltage Input (note
1, 3)
3.3 2.2
V
ILD
Dynamic Low
Voltage Input (note
1, 3)
3.3 0.9
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