SGS Thomson Microelectronics 74LVX126TTR, 74LVX126MTR Datasheet

74LVX126

LOW VOLTAGE CMOS QUAD BUS BUFFERS (3-STATE)

WITH 5V TOLERANT INPUTS

■ HIGH SPEED:

t

=4.4ns (TYP.) at VCC = 3.3V

PD

■ 5V TOLERANT INPUTS

■ POWER-DOWN PROTECTION ON INPUTS

■ INPUT VOLTAGE LEVEL:

V

= 0.8V, VIH = 2V at VCC =3V

IL

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ LOW NOISE:

V

= 0.3V (TYP.) at VCC =3.3V

OLP

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4 mA (MIN) at VCC =3V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE R ANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

(OPR) = 2V to 3.6V (1.2V Data Retention)

74 SERIES 126

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74LVX126 is a low voltage CMOS QUAD
BUS BUFFERs fabricated with sub-micron silic on
gate and double-layer metal wiring C

2

MOS
technology. It is ideal for low power, battery
operated and low noise 3.3V applications.

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74LVX126M 74LVX126MTR

TSSOP 74LVX126TTR

This device requires the 3-STATE control input G
to be set low to pl ace the output go in to the hi gh
impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V. It combines high speed
performance with the true CMOS low power
consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9July 2001

74LVX126

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 10, 13 1G to 4G Output Enable Inputs

2, 5, 9, 12 1A to 4A Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

TRUTH TABLE

AGY

XLZ

LHL

HHH

X :Don‘t Care
Z : High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) Truth T abl e guaranteed: 1.2V to 3.6V

2) V

from 0.8V to 2.0V

IN

2/9

Supply Voltage (note 1)

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 2) (V

CC

= 3V)

2 to 3.6 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100 ns/V

V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

High Impedance

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Quiescent Supply

CC

Current

74LVX126

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5
222

3.6

2.4 2.4 2.4

2.0 0.5 0.5 0.5

3.6 0.8 0.8 0.8

2.0

3.0

2.0

3.0

3.6

3.6

3.6

IO=-50 µA
I

=-50 µA

O

I

=-4 mA

O

IO=50 µA
I

=50 µA

O

I

=4 mA

O

= VIH or V

V

I

IL

VO = VCC or GND

= 5.5V or GND

V

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

2.58 2.48 2.4

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

±0.25 ± 2.5 ± 5 µA

-40 to 85°C -55 to 125°C

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

22020µA

Unit

V3.0

V3.0 0.8 0.8 0.8

V3.0

V3.0

DYNAMIC SWITCHING CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

V
V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2)

V

CC

(V)

3.3

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.5

-0.5 -0.3

Dynamic High

V

IHD

Voltage Input

3.3 2.0

= 50 pF

C

L

(note 1, 3)
Dynamic Low

V

ILD

Voltage Input

3.3 0.8

(note 1, 3)

1) Worst c ase package.

2) Max number of output s defined as (n). Dat a i nputs are driven 0V to 3.3V, (n -1) outputs switc hi ng and one out put at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
(V

), f=1MHz.

IHD

-40 to 85°C -55 to 125°C

ILD

Unit

V

), 0V to threshold

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