74LVX03
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE
(OPEN DRAIN) WITH 5V TOLERANT INPUTS
■ HIGH SPEED :
t
= 4.8ns (TYP.) at V
PD
■ 5V TOLERANT INPUTS
■ INPUT VOLTAGE LEVEL :
V
=0.8V , VIH=2V at VCC=3V
IL
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ LOW NOISE:
V
= 0.3V (TYP.) at VCC = 3.3V
OLP
■ OPERATING VOL TAGE RANGE:
V
(OPR) = 2V to 3.6V (1.2V Data Retention)
CC
■ PIN AND FUNCTION COMPATIBLE WITH
CC
= 3.3V
74 SERIES 03
■ IMPROVED LATCH-UP IMMUNITY
■ POWER DOWN PROTECTION ON INPUTS
DESCRIPTION
The 74LVX03 is a low voltage CMOS OPEN
DRAIN HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power, battery operated and low noise 3.3V
applications.
The internal circuit is composed of 3 stages
including buffer ou tput, which provides high noise
immunity and stable output.
This device can, with an external pull-up resistor,
be used in wired AND configuration. This d evice
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVX03M 74LVX03MTR
TSSOP 74LVX03TTR
can also be used as a led driver a nd in any other
application requiring a current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8July 2001
74LVX03
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
TRUTH TABLE
ABY
LLZ
LHZ
HLZ
HHL
Z: High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) Truth T abl e guarante ed: 1.2V to 3.6 V
2) V
from 0.8V to 2.0V
IN
2/8
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 2) (V
= 3.3V)
CC
2 to 3.6 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 100 ns/V
V
DC SPECIFICATIONS
Symbol Parameter
V
High Level Input
IH
Voltage
Low Level Input
V
IL
Voltage
V
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
I
High Impedance
OZ
Output Leakage
Current
I
Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
3.6 2.4 2.4 2.4
2.0 0.5 0.5 0.5
3.6 0.8 0.8 0.8
2.0
3.0
3.6
3.6
3.6
IO=50 µA
I
=50 µA
O
I
=4 mA
O
= 5V or GND
V
I
= VIH or V
V
I
IL
VO = VCC or GND
= VCC or GND
V
I
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
±0.25 ± 2.5 ± 5.0 µA
22020µA
74LVX03
Unit
V3.0 2.0 2.0 2.0
V3.0 0.8 0.8 0.8
V3.0
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
V
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
Dynamic High
IHD
Voltage Input (note
3.3
3.3 2
= 50 pF
C
L
1, 3)
V
Dynamic Low
ILD
Voltage Input (note
3.3 0.8
1, 3)
1) Worst c ase package .
2) Max number of outp ut s defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
(V
), f=1MHz.
IHD
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.5
-0.5 -0.3
ILD
Unit
V
), 0V to threshold
3/8