SGS Thomson Microelectronics 74LVQ86 Datasheet



74LVQ86

QUAD EXCLUSIVE OR GATE

■ HIGHSPEED:t

■

COMPATIBLEWITHTTLOUTPUTS

■ LOW POWERDISSIPAT ION:

I

=2 µA (MAX.)at TA=25oC

CC

■

LOWNOISE:

=0.3V (TYP.)at VCC=3.3V

V

OLP

■

75ΩTRANSMISSIONLINEDRIVING

=5.5ns(TYP.)atVCC=3.3V

PD

CAPABILITY

■ SYMMETRICALOUTPUT IMPEDANCE:

|=IOL=12mA (MIN)

|I

OH

■ PCIBUSLEVELSGUARANTEEDAT24mA

■

BALANCEDPROPAGATIONDELAYS: t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

(OPR)= 2V to3.6V(1.2VDataRetention)

V

CC

■ PINANDFUNCTION COMPATIBLEWITH

74SERIES86

■ IMPROVEDLATCH-UP IMMUNITY

DESCRIPTION

The LVQ86 is a low voltage CMOS QUAD EXCLUSIVE OR GATE fabricated with

M

(Micro Package)

(TSSOPPackage)

T

ORDERCODES :

74LVQ86M 74LVQ86T

sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. It is ideal for low

powerand lownoise 3.3Vapplications. It has better speed performance at 3.3V than 5V

LS-TTL family combined with the true CMOS low powerconsumption.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGICSYMBOLS

February 1999

1/8

74LVQ86

INPUT AND OUTPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCTI O N

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLL

LHH HLH HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximum Ratingsarethosevaluesbeyondwhichdamagetothedevicemayoccur. Functionaloperationunderthesecondition isnotimplied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current ± 20 mA

IK

DC Output Diode Current DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 200 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

dt/dv Input Rise and Fall Time (V

1) Truth Table guaranteed: 1.2V to3.6V

2)V

from0.8Vto2V

IN

2/8

Supply Voltage (note 1) 2 to 3.6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 3V) (note 2) 0 to 10 ns/V

CC

CC CC

V V

o

C

74LVQ86

DC SPECIFICATIONS

Symbol Parameter Test Conditions Value Unit

=25oC -40 to 85oC

V

CC

(V)

High Level Input Voltage

V

IH

Low Level Input Voltage 0.8 0.8 V

V

IL

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current

I

Quiescent Supply

I

CC

3.0 to

3.6

3.0

3.0 V

3.6

(*)

IO=-50 µA 2.9 2.99 2.9

=

V

I

V

or

IH

V

IL

(*)

I

V

IH

V

IL

=-12 mA 2.58 2.48

I

O

=-24 mA 2.2

I

O

=

IO=50 µA 0.002 0.1 0.1

or

=12 mA 0 0.36 0.44

I

O

=24 mA 0.55

I

O

VI=VCCor GND

3.6 VI=VCCor GND 2 20 µA

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximumtest duration 2ms, one output loaded at time

2)Incidentwaveswitchingisguaranteed ontransmission lineswithimpedances aslowas 50 Ω. (*)Alloutputs loaded.

3.6 V

= 0.8 V max 36 mA

OLD

V

= 2 V min -25 mA

OHD

T

A

Min. Typ. Max. Min. Max.

2.0 2.0 V

0.1

±

1

±

µ

V

A

DYNAMICSWITCHING CHARACTERISTICS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

V V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

3.3

3.3 2

C

L

=50pF

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

3.3 0.8

Input (note 1, 3)

1)Worst casepackage.

2)Maxnumberofoutputs defined as(n).Datainputs aredriven 0Vto3.3V,(n-1)outputsswitching andone outputat GND.

3)Maxnumberofdatainputs(n)switching.(n-1) switching0Vto3.3V. Inputs under testswitching: 3.3Vtothreshold (V

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

0.3 0.8

-0.8 -0.3

),0Vtothreshold (V

ILD

).,f=1MHz.

IHD

V

3/8