SGS Thomson Microelectronics 74LVQ245 Datasheet

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74LVQ245

LOW VOLTAGE CMOS OCTAL BUS

TRANSCEIVER(3-STATE)

■ HIGHSPEED:t

■

COMPATIBLEWITHTTL OUTPUTS

■ LOW POWERDISSIPATION:

I

=5µA (MAX.) atTA=25oC

CC

■ LOWNOISE:V

■ 75Ω TRANSMISSIONLINEDRIVING

=6 ns(TYP.)atVCC=3.3V

PD

= 0.5V(TYP.)atVCC=3.3V

OLP

CAPABILITY

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=12mA(MIN)

OH

■ PCIBUSLEVELSGUARANTEEDAT 24mA

■ BALANCEDPROPAGATIONDELAYS:

≅

t

t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto 3.6V (1.2VData Retention)

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES245

■

IMPROVEDLATCH-UPIMMUNITY

DESCRIPTION

The LVQ245 is a low voltage CMOS OCTAL BUS
TRANSCEIVER (3-STATE) fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology. It is ideal for low
powerand low noise 3.3V applications.
It has better speed performance at 3.3V than 5V
LSTTL family combined with the true CMOS low
powerconsumption.

M

(Micro Package)

(TSSOPPackage)

T

ORDERCODES :

74LVQ245M 74LVQ245T

This IC is intended for two-way asynchronous
communicationbetween data buses; the direction
of data trasmission is determined by DIR input.
The enable input G can be used to disable the
deviceso thatthe buses are effectivelyisolated.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.

IT IS PROHIBITED TO APPLY A SIGNAL TO A
TERMINAL WHEN IT IS IN OUTPUT MODE
AND WHEN A BUS TERMINAL IS FLOATING
(HIGH IMPEDANCE STATE) IT IS REQUESTED
TO FIX THE INPUT LEVEL BY MEANS OF
EXTERNAL PULL DOWN OR PULL UP
RESISTOR.

PIN CONNECTIONAND IEC LOGIC SYMBOLS

March 1999

1/8

74LVQ245

INPUT EQUIVALENTCIRCUIT

TRUTH TABLE

INP UT FUNCTI O N OUT P UT

GDIRABUSBBUS

L L OUTPUT INPUT A = B

L H INPUT OUTPUT B = A

HXZZZ

X:”H” or”L”
Z:Highimpedance

PIN DESCRIPTION

PI N No SYM BO L NAM E AND FUNCTION

1 DIR Directional Control

2, 3, 4, 5,

6, 7, 8, 9

18, 17,16,
15, 14,13,

12, 11

19 G Output Enable Input
10 GND Ground (0V)
20 V

A1 to A8 Data Inputs/Outputs

B1 to B8 Data Inputs/Outputs

CC

Positive Supply Voltage

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

V

V

I

I

OK

I

or I

I

CC

T

T

AbsoluteMaximum Ratingsarethose valuesbeyondwhichdamage tothedevicemayoccur. Functionaloperation underthese condition isnotimplied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage (DIR, G) -0.5 to VCC+ 0.5 V

I

DC Bus I/O Voltage -0.5 to VCC+ 0.5 V

I/O

DC Input Diode Current

IK

20 mA

±

DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 400 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

V

V

T

t

r,tf

1) Truth Table guaranteed: 1.2V to 3.6V

from0.8Vto2V

2)V

IN

Supply Voltage (note 1) 2 to 3.6 V

CC

Input Voltage (DIR, G) 0 to V

I

Bus I/O Voltage 0 to V

I/O

Operating Temperature: -40 to +85

op

CC
CC

Input Rise and Fall Time (VCC= 3V) (note 2) 0 to 10 ns/V

V
V

o

C

2/8

74LVQ245

DC SPECIFICATIONS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

High Level Input Voltage

V

IH

Low Level Input Voltage 0.8 0.8 V

V

IL

High Level Output

V

OH

3.0 to

3.6

3.0 V

Voltage

Low Level Output

V

OL

3.0 V

Voltage

Input Leakage Current

I

I

3 State Output Leakage

I

OZ

Current
Quiescent Supply

I

CC

3.6

3.6

3.6 VI=VCCor GND 4 40 µA

VO= 0.1V or

-0.1 V

V

CC

(*)

=

IO=-50 µA 2.9 2.99 2.9

I

or

V

IH

V

IL

(*)

I

V

IH

V

IL

=-12 mA 2.58 2.48

I

O

=-24 mA 2.2

I

O

=

IO=50 µA 0.002 0.1 0.1

or

=12 mA 0 0.36 0.44

I

O

=24 mA 0.55

I

O

VI=VCCor GND ±0.1 ±1 µA

VI=VIHor V

IL

VO=VCCor GND

Current
Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximum test duration 2ms,oneoutput loaded attime

2)Incident waveswitchingisguaranteedontransmission lineswithimpedances aslowas 75 Ω.
(*)Alloutputs loaded.

3.6 V

= 0.8 V max 36 mA

OLD

V

= 2 V min -25 mA

OHD

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

2.0 2.0

0.3

±

3

±

µ

V

V

V

A

DYNAMICSWITCHING CHARACTERISTICS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

V
V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

3.3

3.3 2

C

L

=50pF

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

3.3 0.8

Input (note 1, 3)

1)Worstcasepackage

2)Maxnumberofoutputsdefined as(n).Datainputsaredriven 0V to 3.3V,(n -1)outputs switching andoneoutputatGND

3)maxnumberofdatainputs (n)switching.(n-1)switching0Vto3.3V. Inputsunder testswitching:3.3Vto threshold (V

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

0.5 0.8

-0.8 -0.5

),0Vtothreshold (V

ILD

).f=1MHz

IHD

V

3/8