SGS Thomson Microelectronics 74LVQ244 Datasheet
LOW VOLTAGE OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON-INVERTED)
■ HIGHSPEED:
t
=6 ns(TYP.)atVCC=3.3V
PD
■ COMPATIBLEWITHTTLOUTPUT
■ LOW POWER DISSIPATION:
=4 µA (MAX.) at TA=25oC
I
CC
■ LOWNOISE:
V
=0.4V(TYP.)atVCC=3.3V
OLP
■ 75Ω TRANSMISSIONLINEOUTPUTDRIVE
CAPABILITY
■ SYMMETRICALOUTPUTIMPEDANCE:
|I
|=IOL=12mA (MIN)
OH
■ PCIBUSLEVELSGUARANTEEDAT 24mA
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 2V to 3.6V (1.2VDataRetention)
CC
■ PINANDFUNCTION COMPATIBLEWITH
74 SERIES244
■ IMPROVEDLATCH-UPIMMUNITY
DESCRIPTION
The LVQ244is a low voltage CMOS OCTALBUS
BUFFER fabricated with sub-micron silicon gate
and double-layer metal wiring C
2
MOS
74LVQ244
M
(Micro Package)
(TSSOPPackage)
ORDERCODES:
74LVQ244M 74LVQ244T
technology.It is ideal for low powerand low noise
3.3Vapplications.
It has betterspeed performance at 3.3V than 5V
LSTTL family combined with the true CMOS low
powerconsumption.
G output controlgoverns four BUS BUFFERs.
This device is designed to be used with 3 state
memoryaddress drivers, etc.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
T
PIN CONNECTION AND IEC LOGICSYMBOLS
February 1999
1/8
74LVQ244
INPUT AND OUTPUT EQUIVALENTCIRCUIT
TRUTH TABLE
INPUT OUTPU T
GAnYn
LLL
LHH
HXZ
X:”H” or”L”
Z:Highimpedance
PIN DESCRIPTION
PI N No S YM BO L NAM E AN D FU NCTIO N
1 1G Output Enable Input
2,4,6,8 1A1to1A4 Data Inputs
9,7,5,3 2Y1to2Y4 Data Outputs
11,13,15,17 2A1to2A4 Data Inputs
18,16,14,12 1Y1to1Y4 Data Outputs
19 2G Output Enable Input
10 GND Ground (0V)
20 V
Positive Supply Voltage
CC
ABSOLUTE MAXIMUM RATING
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.
Supply Voltage -0.5to+7 V
CC
DC Input Voltage -0.5toVCC+0.5 V
I
DC Output Voltage -0.5toVCC+0.5 V
O
DC Input Diode Current
IK
20 mA
±
DC Output Diode Current ±20 mA
DC Output Current ±50 mA
O
DC VCCor Ground Current ±400 mA
GND
Storage Temperature -65to+150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv Input Rise and Fall Time (V
1) Truth Table guaranteed: 1.2Vto 3.6V
from0.8Vto2V
2)V
IN
Supply Voltage (note 1) 2to3.6 V
CC
Input Voltage 0toV
I
Output Voltage 0toV
O
Operating Temperature: -40to+85
op
= 3V) (note 2) 0to10 ns/V
CC
CC
CC
V
V
o
C
2/8
74LVQ244
DC SPECIFICATIONS
Symbol Parameter Test Conditions Value Unit
T
V
CC
(V)
High Level Input Voltage
V
IH
Low Level Input Voltage 0.8 0.8 V
V
IL
High Level Output
V
OH
Voltage
Low Level Output
V
OL
Voltage
Input Leakage Current
I
I
3 State Output Leakage
I
OZ
Current
Quiescent Supply
I
CC
3.0to 3.6
3.0 V
3.0 V
3.6
3.6
(*)
=
I
V
IH
V
I
V
IH
V
IO=-50µA 2.9 2.99 2.9
or
=-12 mA 2.58 2.48
I
O
IL
(*)
IL
=-24mA 2.2
I
O
=
IO=50µA 0.002 0.1 0.1
or
=12mA 0 0.36 0.44
I
O
=24mA 0.55
I
O
VI=VCCorGND ±0.1 ±1 µA
VI=VIHorV
IL
VO=VCCorGND
3.6 VI=VCCorGND 4 40 µA
Current
Dynamic Output Current
I
OLD
(note 1, 2)
I
OHD
1) Maximumtestduration 2ms, one output loaded attime
2)Incidentwaveswitchingis guaranteed ontransmissionlineswithimpedancesaslow as50 Ω.
(*)All outputs loaded.
3.6 V
=0.8Vmax 36 mA
OLD
V
=2Vmin -25 mA
OHD
=25oC -40 t o 85oC
A
Min. Typ. Max. Min. Max.
2.0 2.0
0.5
±
5
±
µ
V
V
V
A
DYNAMICSWITCHING CHARACTERISTICS
Symbol Parameter Test Conditions Value Unit
T
V
CC
(V)
V
V
Dynamic Low Voltage
OLP
Quiet Output (note 1, 2)
OLV
Dynamic High Voltage
V
IHD
3.3
3.3 2
C
L
=50pF
Input (note 1, 3)
Dynamic Low Voltage
V
ILD
3.3 0.8
Input (note 1, 3)
1)Worstcasepackage
2)Maxnumberofoutputsdefinedas(n).Datainputsaredriven0Vto3.3V,(n-1)outputsswitching andone outputatGND
3)maxnumberofdatainputs (n)switching.(n-1)switching0Vto3.3V.Inputsunder testswitching: 3.3Vtothreshold (V
=25oC -40 t o 85oC
A
Min. Typ. Max. Min. Max.
0.4 0.8
-0.8 -0.5
),0Vtothreshold(V
ILD
).f=1MHz
IHD
V
3/8
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