SGS Thomson Microelectronics 74LVQ04 Datasheet



74LVQ04

HEX INVERTER

■ HIGHSPEED:t

■

COMPATIBLEWITHTTLOUTPUTS

■ LOW POWERDISSIPATION:

I

=2µA (MAX.)at TA=25oC

CC

■ LOWNOISE:

V

=0.3 V (TYP.)at VCC=3.3V

OLP

■

75ΩTRANSMISSIONLINEDRIVING

=4.5ns(TYP.)atVCC=3.3V

PD

CAPABILITY

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=12mA(MIN)

OH

■ PCIBUSLEVELSGUARANTEEDAT 24mA

■

BALANCEDPROPAGAT IONDELAYS: t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto3.6V(1.2VDataRetention)

CC

■ PINANDFUNCTION COMPATIBLEWITH

74SERIES04

■ IMPROVEDLATCH-UP IMMUNITY

DESCRIPTION

The LVQ04 is a low voltage CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS

M

(Micro Package)

(TSSOPPackage)

T

ORDERCODES :

74LVQ04M 74LVQ04T

technology.Itis ideal for low power and low noise

3.3Vapplications. The internal circuit is composed of 3 stages

including buffer output, which enableshigh noise immunityand stableoutput.

It has better speed performance at 3.3V than 5V LS-TTL family combined with the true CMOS low powerconsumption.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION ANDIECLOGICSYMBOLS

February 1999

1/8

74LVQ04

INPUT AND OUTPUTEQUIVALENT CIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTION

1, 3, 5, 9,

1A to 6A Data Inputs

11, 13

2, 4, 6, 8,

1Y to 6Y Data Outputs

10, 12

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevice mayoccur. Functionaloperationunderthesecondition isnotimplied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 300 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

20 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

dt/dv Input Rise and Fall Time (V

1) TruthTable guaranteed: 1.2V to 3.6V from0.8V to 2V

2)V

IN

2/8

Supply Voltage (note 1) 2 to 3.6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 3V) (note 2) 0 to 10 ns/V

CC

CC CC

V V

o

C

74LVQ04

DC SPECIFICATIONS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

High Level Input Voltage

V

IH

Low Level Input Voltage 0.8 0.8 V

V

IL

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current

I

Quiescent Supply

I

CC

3.0 to

3.6

3.0

3.6

V

IO=-50 µA 2.9 2.99 2.9

(*)

=

I

V

IL

(*)

I

V

IH

=-12 mA 2.58 2.48

I

O

=-24 mA 2.2

I

O

IO=50 µA 0.002 0.1 0.1

=

=12 mA 0 0.36 0.44

I

O

=24 mA 0.55

I

O

VI=VCCor GND ±0.1 ±1 µA

3.6 VI=VCCor GND 2 20

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximumtest duration 2ms, one output loaded attime

2)Incident waveswitchingisguaranteed ontransmission lines withimpedances aslowas50 Ω.

(*)All outputs loaded.

3.6 V

= 0.8 V max 36 mA

OLD

V

= 2 V min -25 mA

OHD

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

2.0 2.0

µ

V

A

DYNAMICSWITCHING CHARACTERISTICS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

V V

V

Dynamic Low Voltage

OLP

Quiet Output (note 1, 2)

OLV

Dynamic High Voltage

IHD

3.3

3.3 2

C

L

=50pF

Input (note 1, 3)

V

Dynamic Low Voltage

ILD

3.3 0.8

Input (note 1, 3)

1)Worstcasepackage.

2)Maxnumberofoutputsdefined as(n).Datainputs aredriven0Vto3.3V,(n -1)outputs switchingandoneoutput atGND.

3)Maxnumberofdatainputs (n)switching.(n-1)switching0Vto3.3V.Inputs undertestswitching: 3.3Vtothreshold (V

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

0.3 0.8

-0.8 -0.3

),0Vtothreshold(V

ILD

).,f=1MHz.

IHD

V

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