SGS Thomson Microelectronics 74LVC00ATTR, 74LVC00AM, 74LVC00AMTR Datasheet
74LVC00A
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE
HIGH PERFORMANCE
■ 5V TOLERANT INPUTS
■ HIGH SPEED: t
■ POWER DOWN PROTECTION ON INPU T S
= 4.3ns (MAX.) at VCC = 3V
PD
AND OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 24mA (MIN) at VCC = 3V
OH
■ PCI BUS LEVELS GUARANT EED AT 2 4 mA
■ BALANCED PROPAGATION DELAYS:
≅ t
t
PLH
■ OPERATING VOLTAGE RANGE:
V
CC
PHL
(OPR) = 1.65V to 3.6V (1.2V Data
Retention)
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 00
■ LATCH-UP PERFORMANCE EXCEEDS
500mA (JESD 17)
■ ESD PERFORMANCE:
HBM > 2000V (MIL STD 883 method 3015);
MM > 200V
DESCRIPTION
The 74LVC00A is a low voltage CMOS QUAD
2-INPUT NAND GATE fabricated with sub-micron
silicon gate and double-layer metal wiring C
technology. It is ideal for 1.65 to 3.6 V
2
MOS
CC
TSSOPSOP
ORDER CODES
PACKAGE TUBE T & R
SOP 74LVC00AM 74LVC00AMTR
TSSOP 74LVC00ATTR
operations and low power and low noise
applications.
It can be interfaced to 5V signal environment for
inputs in mixed 3.3/5V system.
It has more speed performance at 3.3V than 5V
AC/ACT family, combined with a lower power
consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8February 2002
74LVC00A
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION TRUTH TABLE
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
absolute ma xim um rating must be obse rved
O
2) V
< GND
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC = 0V)
O
DC Output Voltage (High or Low State) (note 1) -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCC or Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0 V
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 50 mA
- 50 mA
± 50 mA
± 100 mA
-65 to +150 °C
300 °C
2/8
74LVC00A
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
V
I
OH
I
OH
I
OH
I
OH
T
dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V
1) Truth T abl e guarante ed: 1.2V to 3.6 V
2) V
from 0.8V to 2V at VCC = 3.0V
IN
DC SPECIFICATIONS
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC = 0V)
O
Output Voltage (High or Low State) 0 to V
O
, I
High or Low Level Output Current (VCC = 3.0 to 3.6V)
OL
, I
High or Low Level Output Current (VCC = 2.7 to 3.0V)
OL
, I
High or Low Level Output Current (VCC = 2.3 to 2.7V)
OL
, I
High or Low Level Output Current (VCC = 1.65 to 2.3V)
OL
Operating Temperature
op
Test Condition Value
1.65 to 3.6 V
0 to 5.5 V
0 to 5.5 V
CC
± 24 mA
± 12 mA
± 8mA
± 4mA
-55 to 125 °C
V
Symbol Parameter
V
V
V
V
I
I
CC
∆I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Power Off Leakage
off
Current
Quiescent Supply
Current
ICC incr. per Input
CC
V
CC
(V)
1.65 to 1.95
-40 to 85 °C -55 to 125 °C
Min. Max. Min. Max.
0.65V
CC
0.65V
CC
2.3 to 2.7 1.7 1.7
2.7 to 3.6 2 2
1.65 to 1.95
0.35V
CC
0.35V
2.3 to 2.7 0.7 0.7
2.7 to 3.6 0.8 0.8
1.65 to 3.6
1.65
2.3
2.7
3.0
3.0
1.65 to 3.6
1.65
2.3
2.7
3.0
3.6
0
3.6
2.7 to 3.6
IO=-100 µAVCC-0.2 VCC-0.2
I
=-4 mA
O
I
=-8 mA
O
I
=-12 mA
O
I
=-18 mA
O
I
=-24 mA
O
IO=100 µA
I
=4 mA
O
I
=8 mA
O
I
=12 mA
O
I
=24 mA
O
= 0 to 5.5V
V
I
or VO = 5.5V
V
I
VI = VCC or GND
V
or VO = 3.6 to
I
5.5V
VIH = VCC-0.6V
1.2 1.2
1.7 1.7
2.2 2.2
2.4 2.4
2.2 2.2
0.2 0.2
0.45 0.45
0.7 0.7
0.4 0.4
0.55 0.55
± 5 ± 5 µA
10 10 µA
10 10
± 10 ± 10
500 500 µA
Unit
V
CC
V
V
V
µA
3/8
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