SGS Thomson Microelectronics 74LCX07M Datasheet
1/10May 2003
■ 5V TOLERANT INPUTS
■ HIGH SPEED :
t
PD
= 5.2ns (MAX.) at VCC=3V
■ POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=IOL= 24mA (MIN) at VCC=3V
■ PCI BUS LEVELS GUARANTEED AT 24 mA
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2.0V to 3.6V (1.5V Data
Retention)
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 07
■ LATCH-UP PERFORMANCE EXCEEDS
500mA (JESD 17)
■ ESD PERFORMANCE:
HBM > 2 000V (MIL STD 883 method 3015);
MM > 200V
DESCRIPTION
The 74LCX07 is a low voltage CMOS OPEN
DRAIN HEX BUFFER fabricated with sub-micron
silicon gate and double-layer me tal wiring C
2
MOS
technology. It is ideal for low power and high
speed 3.3V applications. It canbeinterfaced to 5V
signal environment for inputs.
The internal circuit is composed of 2 stages
including buffer output, which provides high noise
immunity and stable output.
It has same speed performance at 3.3V than 5V
AC/ACT family, combined with a lower power
consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2K V ESD imm unit y and transient excess
voltage.
74LCX07
LOW VOLTAGE CMOS HEX BUFFER (OPEN DRAIN)
WITH 5V TOLERANT INPUTS
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
SOP 74LCX07M 74LCX07MTR
TSSOP 74LCX07TTR
TSSOPSOP
74LCX07
2/10
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION TRUTH TABLE
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
O
absolute maximum rating must be observed
2) VO<GND
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 11,
13
1A to 6A Data Inputs
2, 4, 6, 8, 10,
12
1Y to 6Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
AY
LL
HZ
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage (VCC= 0V)
-0.5 to +7.0 V
V
O
DC Output Voltage (High or Low State) (note 1) -0.5 to VCC+ 0.5
V
I
IK
DC Input Diode Current
-50 mA
I
OK
DC Output Diode Current (note 2)
-50 mA
I
O
DC Output Current
± 50 mA
I
CC
DC Supply Current per Supply Pin
± 100 mA
I
GND
DC Ground Current per Supply Pin
± 100 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
74LCX07
3/10
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.5V to 3.6V
2) V
IN
from0.8V to 2V at VCC=3.0V
DC SPECIFICATIONS
DYNAMIC SWITCHING CHARACTERISTICS
1) Numberof outputsdefined as"n". Measured with"n-1" outputs switching fromHIGH to LOW orLOWto HIGH. The remaining outputis
measured in the LOW state.
Symbol Parameter Value Unit
V
CC
Supply Voltage (note 1)
2.0 to 3.6 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage (VCC= 0V)
0 to 5.5 V
V
O
Output Voltage (High or Low State) 0 to V
CC
V
I
OH,IOL
High or Low Level Output Current (VCC= 3.0 to 3.6V)
± 24 mA
I
OH,IOL
High or Low Level Output Current (VCC= 2.7V)
± 12 mA
T
op
Operating Temperature
-55 to 125 °C
dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
-40to85°C -55to125°C
Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.7to3.6
2.0 2.0 V
V
IL
Low Level Input
Voltage
0.8 0.8 V
V
OL
Low Level Output
Voltage
2.7to3.6
IO=100 µA
0.2 0.2
V
2.7
I
O
=12 mA
0.4 0.4
3.0
I
O
=16 mA
0.4 0.4
I
O
=24 mA
0.55 0.55
I
I
Input Leakage
Current
2.7to3.6
V
I
= 0 to 5.5V
± 5 ± 5 µA
I
off
Power Off Leakage
Current
0
V
I
or VO=5.5V
10 10 µA
I
OZ
High Impedance
Output Leakage
Current
2.7to3.6
V
I=VIH
or V
IL
VO= 0 to V
CC
± 5 ± 5 µA
I
CC
Quiescent Supply
Current
2.7to3.6
VI=VCCor GND
10 10
µA
V
I
or VO= 3.6 to 5.5V
± 10 ± 10
∆I
CC
ICCincr. per Input
2.7to3.6
VIH=VCC-0.6V
500 500 µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
=25°C
Min. Typ. Max.
V
OLP
Dynamic Low Level Quiet
Output (note 1)
3.3
V
IL
=0V
V
IH
= 3.3V
0.8
V
V
OLV
-0.8
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