The 74LCX04 is a low voltage CMOS HEX
INVERTER fabricated with sub-micron silicon
gate and double-layer metal wiring C
2
MOS
TSSOPSOP
ORDER CODES
PACKAGETUBET & R
SOP74LCX04M74LCX04MTR
TSSOP74LCX04TTR
technology. It is ideal for low power and high
speed 3.3V applications. It can be interfaced to 5V
signal environment for inputs.
It has same speed performance at 3. 3V than 5V
AC/ACT family, combined with a lower power
consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8September 2001
74LCX04
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION TRUTH TABLE
PIN NoSYMBOLNAME AND FUNCTION
1,3,5,9,11,131A to 6AData Inputs
2, 4, 6, 8,
10, 12
1Y to 6YData Outputs
AY
LH
HL
7GNDGround (0V)
14
V
CC
Positive Supply Voltage
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
I
CC
I
GND
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
absolute ma xim um rating mu st be observed
O
2) V
< GND
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC = 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC Supply Current per Supply Pin
DC Ground Current per Supply Pin
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
- 50mA
- 50mA
± 50mA
± 100mA
± 100mA
-65 to +150°C
300°C
2/8
74LCX04
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH
I
OH
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth T abl e guaranteed: 1.5V to 3.6V
2) V
from 0.8V to 2V at VCC = 3.0V
IN
DC SPECIFICATIONS
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC = 0V)
O
Output Voltage (High or Low State)0 to V
O
, I
High or Low Level Output Current (VCC = 3.0 to 3.6V)
OL
, I
High or Low Level Output Current (VCC = 2.7V)
OL
Operating Temperature
op
Test ConditionValue
2.0 to 3.6V
0 to 5.5V
0 to 5.5V
CC
± 24mA
± 12mA
-55 to 125°C
V
SymbolParameter
V
V
V
V
I
I
CC
∆I
IH
IL
OH
OL
I
I
off
CC
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Power Off Leakage
Current
Quiescent Supply
Current
ICC incr. per Input
V
CC
(V)
2.7 to 3.6
2.7 to 3.6
2.7
3.0
2.7 to 3.6
2.7
3.0
2.7 to 3.6
0
2.7 to 3.6
2.7 to 3.6
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
2.02.0V
0.80.8V
IO=-100 µAVCC-0.2VCC-0.2
I
=-12 mA
O
I
=-18 mA
O
I
=-24 mA
O
IO=100 µA
I
=12 mA
O
I
=16 mA
O
I
=24 mA
O
= 0 to 5.5V
V
I
or VO = 5.5V
V
I
VI = VCC or GND
V
or VO= 3.6 to 5.5V
I
VIH = VCC - 0.6V
2.22.2
2.42.4
2.22.2
0.20.2
0.40.4
0.40.4
0.550.55
± 5± 5µA
1010µA
1010
± 10± 10
500500µA
Unit
V
V
µA
DYNAMIC SWITCHING CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
V
OLP
V
OLV
1) Number of outputs d ef i ned as "n". Me asured with "n-1" output s switching from HIGH to LO W or LOW to HIGH. The remaini ng outpu t is
measur ed i n the LOW state.
Dynamic Low Level Quiet
Output (note 1)
V
3.3
CC
(V)
= 50pF
C
L
V
= 0V, VIH = 3.3V
IL
Min.Typ.Max.
= 25 °C
A
0.8
-0.8
Unit
V
3/8
74LCX04
AC ELECTRICAL CHARACTERISTICS
Test ConditionValue
SymbolParameter
V
CC
(V)
t
PLH tPHL
t
OSLH
t
OSHL
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (t
2) Param eter guaran te ed by design
Propagation Delay
Time
Output To Output
Skew Time (note1,
2)
2.7
3.0 to 3.61.05.26.0
3.0 to 3.6505002.51.01.0ns
OSLH
C
L
(pF)
505002.5
= | t
PLHm
- t
PLHn
R
(Ω)
|, t
L
OSHL
t
s
(ns)
= t
= | t
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
6.06.9
- t
PHLn
|)
PHLm
Unit
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation Capacitance
PD
(note 1)
V
CC
(V)
3.3
VIN = 0 to V
3.3fIN = 10MHz
V
= 0 or V
IN
Min.Typ.Max.
CC
CC
CC(opr)
= 25 °C
A
Unit
5pF
41
= CPD x VCC x fIN + ICC/6 (per gate)
pF
TEST CIRCUIT
CL = 50 pF or equival ent (includes jig and probe capacitance)
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