SGS Thomson Microelectronics 74H1G66STR Datasheet
74H1G66
SINGLE BILATERAL SWITCH
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ LOW "ON" RESISTANCE :
R
= 50Ω (TYP.) AT VCC = 9V I
ON
■ SINE WAVE DISTORTION:
= 28% VCC (MIN.)
NIL
0.042% AT V
■ WIDE OPERATING RANGE:
V
(OPR) = 2V TO 12V
CC
= 4ns (TYP.) at VCC = 4.5V
PD
I/O
= 4V f = 1KHz
CC
= 100µA
DESCRIPTION
The 74H1G66 is a CMOS SINGLE BILATERAL
SWITCH fabricated in silicon gate C
2
MOS
technology. It achieves high speed performance
combined with true CMOS low power
consumption.
The C input is provided to cont rol the switch a nd
it’s compatible with standard CMOS output; the
switch is ON (port I/O is connected to Port O/I)
when the C input is held high and OFF (high
SOT23-5L
ORDER CODES
PACKAGE T & R
SOT23-5L 74H1G66STR
impedance state exists between the two ports)
when C is held low.
All inputs and output are equippe d with prot ection
circuits against stati c disc harge , giving t hem ES D
immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/10July 2001
74H1G66
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1 I/O Independent Input/Output
2 O/I Independent Output/Input
3 GND Ground (0V)
4C
5
V
CC
TRUTH TABLE
C SWITCH FUNCTION
HON
L OFF *
* High Impedance Stat e
ABSOLUTE MAXIMUM RATI N GS
Symbol Parameter Value Unit
V
V
V
I
IOK
I
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input/Output Voltage -0.5 to VCC + 0.5
I/O
DC Control Input Voltage -0.5 to VCC + 0.5
IC
DC Input/Output Diode Current
DC Control Input Diode Current
IK
DC Output Source Sink Current per Output Pin
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
Enable Input (Active
HIGH)
Positive Supply Voltage
-0.5 to +13.0 V
V
V
± 20 mA
± 20 mA
± 25 mA
± 50 mA
500 (*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/10
V
V
V
T
t
r
Supply Voltage
CC
Control Input Voltage 0 to V
I
Input/Output Voltage 0 to V
I/O
Operating Temperature
op
Input Rise and Fall Time on control pin VCC = 2.0V
V
= 4.5V
, t
f
CC
V
CC
V
CC
= 6.0V
= 10.0V
2 to 12 V
CC
CC
-55 to 125 °C
0 to 1000 ns
0 to 500 ns
0 to 400 ns
0 to 250 ns
V
V
DC SPECIFICATIONS
Symbol Parameter
V
V
R
R
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
ON Resistance 4.5 VIC = VIH
ON
ON Resistance 4.5
ON
Input/Output
OFF
Leakage Current
(SWITCH OFF)
Switch Input
I
IZ
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
I
Control Input
IN
Leakage Current
Quiescent Supply
CC
Current
74H1G66
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
9.0 6.3 6.3 6.3
12.0 8.4 8.4 8.4
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
9.0 2.7 2.7 2.7
12.0 3.6 3.6 3.6
96 170 200 250
V
= VCC to GND
I/O
I
12.0 45 80 90 120
12.0 45 70 90 110
≤ 1mA
I/O
= VIH
V
IC
V
= VCC or GND
I/O
I
≤ 1mA
I/O
70 100 130 160
12.0 VOS = VCC to GND
V
= VCC to GND
IS
V
= V
IC
IL
12.0 VOS = VCC to GND
V
= V
IC
IH
6.0 VIC = 5.5V or GND ± 0.1 ± 1.0 ± 1.0 µA
6.0
V
= VCC or GND
I
12.0 8 80 160
-40 to 85°C -55 to 125°C
Unit
±0.1 ± 1 ± 2 µA
±0.1 ± 1 ± 2 µA
11020
V
V
Ω9.0 55 85 100 150
Ω9.0 50 75 95 115
µA9.0 4 40 80
3/10
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